Image sensor with stacked structures

    公开(公告)号:US10833129B2

    公开(公告)日:2020-11-10

    申请号:US16436239

    申请日:2019-06-10

    Abstract: Provided is an image sensor, which includes: a first substrate; a first structure on a front surface of the first substrate, the first structure including a first interlayer insulating layer surrounding a first conductive layer; a second substrate; a second structure on a front surface of the second substrate facing the front surface of the first substrate, the second structure including a second interlayer insulating layer, the second interlayer insulating layer being bonded to the first interlayer insulating layer; an organic photoelectric layer on a back surface of the second substrate; and a via electrode structure in contact with the first conductive layer through the second substrate and the second structure, the via electrode structure including an air gap therein.

    IMAGE SENSOR
    2.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号:US20200105836A1

    公开(公告)日:2020-04-02

    申请号:US16436239

    申请日:2019-06-10

    Abstract: Provided is an image sensor, which includes: a first substrate; a first structure on a front surface of the first substrate, the first structure including a first interlayer insulating layer surrounding a first conductive layer; a second substrate; a second structure on a front surface of the second substrate facing the front surface of the first substrate, the second structure including a second interlayer insulating layer, the second interlayer insulating layer being bonded to the first interlayer insulating layer; an organic photoelectric layer on a back surface of the second substrate; and a via electrode structure in contact with the first conductive layer through the second substrate and the second structure, the via electrode structure including an air gap therein.

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