公开(公告)号：US11043538B2

公开(公告)日：2021-06-22

申请号：US16226016

申请日：2018-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-jun Choi ,  Kwan-sik Kim ,  Beom-suk Lee ,  Hae-min Lim ,  Man-geun Cho

IPC: H01L27/30 ,  H04N5/378 ,  H01L51/44 ,  H01L27/146

Abstract: Organic image sensors are provided. An organic image sensor includes a pixel electrode including a plurality of first electrodes spaced apart from each other. The organic image sensor includes an insulating region including a protruding portion that protrudes beyond surfaces of the plurality of first electrodes. The organic image sensor includes an organic photoelectric conversion layer on the pixel electrode and the protruding portion of the insulating region. Moreover, the organic image sensor includes a second electrode opposite the pixel electrode and on the organic photoelectric conversion layer.

公开(公告)号：US10833129B2

公开(公告)日：2020-11-10

申请号：US16436239

申请日：2019-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwan-sik Kim ,  Chang-hwa Kim ,  Yoon-Kyoung Kim ,  Sang-Su Park ,  Beom-suk Lee ,  Man-geun Cho ,  Min-jun Choi

IPC: H01L27/30 ,  H01L27/28

Abstract: Provided is an image sensor, which includes: a first substrate; a first structure on a front surface of the first substrate, the first structure including a first interlayer insulating layer surrounding a first conductive layer; a second substrate; a second structure on a front surface of the second substrate facing the front surface of the first substrate, the second structure including a second interlayer insulating layer, the second interlayer insulating layer being bonded to the first interlayer insulating layer; an organic photoelectric layer on a back surface of the second substrate; and a via electrode structure in contact with the first conductive layer through the second substrate and the second structure, the via electrode structure including an air gap therein.

公开(公告)号：US20200105836A1

公开(公告)日：2020-04-02

申请号：US16436239

申请日：2019-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwan-sik KIM ,  Chang-hwa Kim ,  Yoon-Kyoung Kim ,  Sang-su Park ,  Beom-suk Lee ,  Man-geun Cho ,  Min-jun Choi

IPC: H01L27/30 ,  H01L27/28

Abstract: Provided is an image sensor, which includes: a first substrate; a first structure on a front surface of the first substrate, the first structure including a first interlayer insulating layer surrounding a first conductive layer; a second substrate; a second structure on a front surface of the second substrate facing the front surface of the first substrate, the second structure including a second interlayer insulating layer, the second interlayer insulating layer being bonded to the first interlayer insulating layer; an organic photoelectric layer on a back surface of the second substrate; and a via electrode structure in contact with the first conductive layer through the second substrate and the second structure, the via electrode structure including an air gap therein.