公开(公告)号：US20200105836A1

公开(公告)日：2020-04-02

申请号：US16436239

申请日：2019-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwan-sik KIM ,  Chang-hwa Kim ,  Yoon-Kyoung Kim ,  Sang-su Park ,  Beom-suk Lee ,  Man-geun Cho ,  Min-jun Choi

IPC: H01L27/30 ,  H01L27/28

Abstract: Provided is an image sensor, which includes: a first substrate; a first structure on a front surface of the first substrate, the first structure including a first interlayer insulating layer surrounding a first conductive layer; a second substrate; a second structure on a front surface of the second substrate facing the front surface of the first substrate, the second structure including a second interlayer insulating layer, the second interlayer insulating layer being bonded to the first interlayer insulating layer; an organic photoelectric layer on a back surface of the second substrate; and a via electrode structure in contact with the first conductive layer through the second substrate and the second structure, the via electrode structure including an air gap therein.