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    IMAGE SENSOR
    1.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20190027539A1

    公开(公告)日：2019-01-24

    申请号：US15851763

    申请日：2017-12-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Changhwa KIM ,  Sejung PARK ,  Junghun KIM ,  Sangsu PARK ,  Kyungrae BYUN ,  Beom Suk LEE

    IPC: H01L27/30 ,  H01L51/44

    Abstract: An image sensor includes an insulating pattern disposed on a semiconductor substrate and having an opening, a color filter disposed within the opening of the insulating pattern, a capping insulating layer disposed on the color filter, a first electrode disposed on the capping insulating layer and having a portion overlapping with the color filter, a separation structure surrounding a side surface of the first electrode, and a photoelectric layer disposed on the first electrode. The separation structure includes a first insulating layer and a second insulating layer formed of different material.

    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20250098352A1

    公开(公告)日：2025-03-20

    申请号：US18968655

    申请日：2024-12-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sang-Su PARK ,  Kwansik KIM ,  Changhwa KIM ,  Taemin KIM ,  Gyuhyun LIM

    IPC: H01L27/146

    Abstract: An image sensor includes a substrate including a first surface and a second surface which is opposite to the first portion, and a pixel isolation portion provided in the substrate and configured to isolate unit pixels from each other. The pixel isolation portion includes a first filling insulation pattern extending from the first surface toward the second surface and having an air gap region, the first filling insulation pattern including a first sidewall and a second sidewall which is opposite to the first sidewall, a conductive structure including a first portion on the first sidewall, a second portion on the second sidewall, and a connection portion connecting the first portion and the second portion, and an insulating liner provided between the first portion and the substrate and between the second portion and the substrate.

    IMAGE SENSOR
    4.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20220139995A1

    公开(公告)日：2022-05-05

    申请号：US17577615

    申请日：2022-01-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Changhwa KIM ,  JungHun KIM ,  Sang-Su PARK ,  Beomsuk LEE ,  Gang ZHANG ,  Jaesung HUR

    IPC: H01L27/146 ,  H01L27/148 ,  H04N5/335 ,  G02B5/20 ,  H01L25/16

    Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

    IMAGE SENSOR INCLUDING TRANSISTOR INCLUDING PROTRUDING CHANNEL ELECTRODE
    5.
    发明申请
    IMAGE SENSOR INCLUDING TRANSISTOR INCLUDING PROTRUDING CHANNEL ELECTRODE 有权

    公开(公告)号：US20210242270A1

    公开(公告)日：2021-08-05

    申请号：US16904708

    申请日：2020-06-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kangmook LIM ,  Sungin KIM ,  Changhwa KIM ,  Yeoseon CHOI

    IPC: H01L27/146

    Abstract: An image sensor is disclosed. The image sensor includes first, second, third and fourth unit pixels. Each of the unit pixels includes a first transfer transistor structure, a second transfer transistor structure and a third transfer transistor structure, a first source follower transistor structure, a second source follower transistor structure and a third source follower transistor structure, and a first selection transistor structure, a second selection transistor structure and a third selection transistor structure, the fourth unit pixel includes a fourth transfer transistor structure and a reset transistor structure, and each of the transfer transistor structures includes a channel electrode and a gate structure that surrounds side surfaces of the channel electrode.

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210111202A1

    公开(公告)日：2021-04-15

    申请号：US16799287

    申请日：2020-02-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyoun-Jee HA ,  Changhwa KIM ,  Jeongsoon KANG

    IPC: H01L27/146

    Abstract: An image sensor is provided. The image sensor includes a substrate and a conductive line pattern. The substrate includes an isolation pattern that extends from a bottom surface of the substrate into the substrate and defines pixel regions, and a photoelectric conversion region and a transistor for each of the pixel regions. The conductive line pattern is disposed on a top surface of the substrate, and vertically overlaps the isolation pattern in plan view and electrically connects to transistors of two or more of the pixel regions.

    IMAGE SENSOR
    7.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20200176504A1

    公开(公告)日：2020-06-04

    申请号：US16787408

    申请日：2020-02-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Changhwa KIM ,  JungHun KIM ,  Sang-Su PARK ,  Beomsuk LEE ,  Gang ZHANG ,  Jaesung HUR

    IPC: H01L27/146 ,  H01L25/16 ,  G02B5/20 ,  H04N5/335 ,  H01L27/148

    Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

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