IMAGE SENSOR
    1.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号:US20190027539A1

    公开(公告)日:2019-01-24

    申请号:US15851763

    申请日:2017-12-22

    Abstract: An image sensor includes an insulating pattern disposed on a semiconductor substrate and having an opening, a color filter disposed within the opening of the insulating pattern, a capping insulating layer disposed on the color filter, a first electrode disposed on the capping insulating layer and having a portion overlapping with the color filter, a separation structure surrounding a side surface of the first electrode, and a photoelectric layer disposed on the first electrode. The separation structure includes a first insulating layer and a second insulating layer formed of different material.

    IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20220149088A1

    公开(公告)日:2022-05-12

    申请号:US17383976

    申请日:2021-07-23

    Abstract: An image sensor includes a substrate, a photoelectric conversion region disposed inside the substrate, a first active region disposed inside the substrate to include a ground region, a floating diffusion region, and a channel region for connecting the ground region and the floating diffusion region, a substrate trench disposed inside the channel region, a transfer gate disposed on a face of the substrate to include a lower gate which fills a part of the substrate trench and has a first width, and an upper gate having a second width smaller than the first width on the lower gate, and a gate spacer disposed inside the substrate trench to be interposed between the ground region and the upper gate.

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