公开(公告)号：US20210028010A1

公开(公告)日：2021-01-28

申请号：US16791189

申请日：2020-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younsoo KIM ,  Haeryong KIM ,  Seungmin RYU ,  Sunmin MOON ,  Jeonggyu SONG ,  Changsu WOO ,  Kyooho JUNG ,  Younjoung CHO

IPC: H01L21/02

Abstract: A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.

公开(公告)号：US20210343524A1

公开(公告)日：2021-11-04

申请号：US17376403

申请日：2021-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younsoo KIM ,  Haeryong KIM ,  Seungmin RYU ,  Sunmin MOON ,  Jeonggyu SONG ,  Changsu WOO ,  Kyooho JUNG ,  Younjoung CHO

IPC: H01L21/02

Abstract: A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.