公开(公告)号：US20200373124A1

公开(公告)日：2020-11-26

申请号：US16706773

申请日：2019-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junho YOON ,  Yonghwan KIM ,  Sangwuk PARK ,  Chanhoon PARK ,  Hyuk KIM ,  Edward SUNG

IPC: H01J37/32

Abstract: A semiconductor processing apparatus includes an upper electrode and a substrate on a lower electrode disposed inside the process chamber, a first power generator configured to provide a low-frequency signal to the lower electrode, wherein the low-frequency signal varies between a reference voltage and a first voltage at intervals of a first cycle, a second power generator configured to provide a high-frequency signal to the lower electrode, wherein the high-frequency signal has a sinusoidal waveform that oscillates at intervals of a second cycle shorter than the first cycle, and a direct-current (DC) power generator configured to provide a DC bias to the upper electrode. The high-frequency signal is turned off during at least part of a duration for which the low-frequency signal has the first voltage, and the high-frequency signal is turned on and turned off at intervals of a third cycle different from the first and second cycles.

公开(公告)号：US20240038493A1

公开(公告)日：2024-02-01

申请号：US18380144

申请日：2023-10-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junho YOON ,  Yonghwan KIM ,  Sangwuk PARK ,  Chanhoon PARK ,  Hyuk KIM ,  Edward SUNG

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01L21/31144

Abstract: A semiconductor processing apparatus includes an upper electrode and a substrate on a lower electrode disposed inside the process chamber, a first power generator configured to provide a low-frequency signal to the lower electrode, wherein the low-frequency signal varies between a reference voltage and a first voltage at intervals of a first cycle, a second power generator configured to provide a high-frequency signal to the lower electrode, wherein the high-frequency signal has a sinusoidal waveform that oscillates at intervals of a second cycle shorter than the first cycle, and a direct-current (DC) power generator configured to provide a DC bias to the upper electrode. The high-frequency signal is turned off during at least part of a duration for which the low-frequency signal has the first voltage, and the high-frequency signal is turned on and turned off at intervals of a third cycle different from the first and second cycles.

公开(公告)号：US20170110291A1

公开(公告)日：2017-04-20

申请号：US15204038

申请日：2016-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Hwa KIM ,  Byungbok KANG ,  Chanhoon PARK ,  Jaehyun LEE ,  SungHyup KIM ,  Jaeick HONG

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32082 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/32844 ,  H01J37/3299 ,  H01J2237/006 ,  Y02C20/30

Abstract: A substrate treatment apparatus may include one or more of a process chamber, a gas supply assembly that may supply one or more gases into the process chamber, a gas exhaust assembly that may exhaust gases from the process chamber, and a gas injector assembly connected to the gas exhaust assembly independently of the process chamber. The gas injector assembly may supply a control gas into the gas exhaust assembly. The apparatus may include a gas injection control device configured to adjustably control the supply of control gas. The gas inject control device may measure an internal pressure of the process chamber and control the supply of control gas based on the internal pressure. The apparatus may include a diffuser that couples the gas injector assembly to the gas exhaust assembly and is configured to diffuse the control gas supplied from the gas injector assembly into the gas exhaust assembly.