公开(公告)号：US11469228B2

公开(公告)日：2022-10-11

申请号：US17146938

申请日：2021-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanwook Lee ,  Seungkwon Kim ,  Jaechul Kim ,  Younggun Ko ,  Yuri Masuoka

IPC: H01L27/092 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L29/45 ,  H01L29/78 ,  H01L21/285 ,  H01L21/8238 ,  H01L29/66

Abstract: Disclosed is a semiconductor device comprising a substrate including PMOSFET and NMOSFET regions, first active fins at the PMOSFET region, second active fins at the NMOSFET region, a gate electrode extending in a first direction and running across the first and second active fins, a first source/drain pattern on the first active fins and connecting the first active fins to each other, a second source/drain pattern on the second active fins and connecting the second active fins to each other, a first active contact electrically connected to the first source/drain pattern, and a second active contact electrically connected to the second source/drain pattern. A maximum width of the first active contact in the first direction is less than a maximum width of the second active in the first direction.