公开(公告)号：US20130161787A1

公开(公告)日：2013-06-27

申请号：US13709239

申请日：2012-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheon-bae KIM ,  Yong-chul OH ,  Kuk-han YOON ,  Kyu-pil LEE ,  Jong-ryul JUN ,  Chang-hyun CHO ,  Gyo-young JIN

IPC: H01L27/08

CPC classification number: H01L27/0805 ,  H01L27/0207 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/91

Abstract: A semiconductor device including at least one first capacitor and at least one second capacitor. The at least one first capacitor includes a first storage node having a cylindrical shape. The at least one second capacitor includes a lower second storage node having a hollow pillar shape including a hollow portion, and an upper second storage node having a cylindrical shape and extending upward from the lower second storage node.

Abstract translation: 一种半导体器件，包括至少一个第一电容器和至少一个第二电容器。 所述至少一个第一电容器包括具有圆柱形形状的第一存储节点。 所述至少一个第二电容器包括具有包括中空部分的空心柱形状的下部第二存储节点和具有圆柱形形状并从所述下部第二存储节点向上延伸的上部第二存储节点。

公开(公告)号：US20140159252A1

公开(公告)日：2014-06-12

申请号：US14103014

申请日：2013-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-hoon HAN ,  Sung-jin KIM ,  Cheon-bae KIM ,  Won-chul LEE ,  Byung-hoon CHO

IPC: H01L23/528

CPC classification number: H01L23/5226 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor structure having a first wire extending in a first direction, an intermetallic insulating layer covering the semiconductor structure, a via structure penetrating the intermetallic insulating layer, and a second wire extending on the intermetallic insulating layer in a second direction at a predetermined angle with respect to the first direction, the second wire being connected to the first wire through the via structure and including first and second portions on each other, and a protruding portion protruding from at least one of the first and second portions, the protruding portion being at a boundary of the first and second portions.

Abstract translation: 半导体器件包括具有沿第一方向延伸的第一线的半导体结构，覆盖半导体结构的金属间绝缘层，穿过金属间绝缘层的通孔结构以及在第二方向上在金属间绝缘层上延伸的第二电极 相对于第一方向的预定角度，第二线通过通孔结构连接到第一线，并且包括第一和第二部分，以及从第一和第二部分中的至少一个突出的突出部分， 突出部分位于第一和第二部分的边界处。