公开(公告)号：US20160133586A1

公开(公告)日：2016-05-12

申请号：US14789247

申请日：2015-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-hyun CHO ,  Jun-phyo LEE ,  Yong-hwan JEONG

IPC: H01L23/00

CPC classification number: H01L24/06 ,  H01L22/32 ,  H01L24/05 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/05553 ,  H01L2224/05557 ,  H01L2224/05576 ,  H01L2224/05616 ,  H01L2224/0562 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05686 ,  H01L2224/0603 ,  H01L2224/06155 ,  H01L2224/06156 ,  H01L2224/16225 ,  H01L2224/48229 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/00012

Abstract: A semiconductor device includes a main pad part and a sub pad part formed in a peripheral area of at least one side of the main pad part. The sub pad part is spaced apart from the main pad part. The sub pad part operates in a first state in which the sub pad part is short-circuited with the main pad part or in a second state in which the sub pad part is open from the main pad part.

Abstract translation: 半导体器件包括形成在主焊盘部分的至少一侧的周边区域中的主焊盘部分和子焊盘部分。 辅助焊盘部分与主焊盘部分间隔开。 辅助焊盘部分工作在第一状态，其中子焊盘部分与主焊盘部分短路或者在其中子焊盘部分从主焊盘部分打开的第二状态。

公开(公告)号：US20130161787A1

公开(公告)日：2013-06-27

申请号：US13709239

申请日：2012-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheon-bae KIM ,  Yong-chul OH ,  Kuk-han YOON ,  Kyu-pil LEE ,  Jong-ryul JUN ,  Chang-hyun CHO ,  Gyo-young JIN

IPC: H01L27/08

CPC classification number: H01L27/0805 ,  H01L27/0207 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/91

Abstract: A semiconductor device including at least one first capacitor and at least one second capacitor. The at least one first capacitor includes a first storage node having a cylindrical shape. The at least one second capacitor includes a lower second storage node having a hollow pillar shape including a hollow portion, and an upper second storage node having a cylindrical shape and extending upward from the lower second storage node.

Abstract translation: 一种半导体器件，包括至少一个第一电容器和至少一个第二电容器。 所述至少一个第一电容器包括具有圆柱形形状的第一存储节点。 所述至少一个第二电容器包括具有包括中空部分的空心柱形状的下部第二存储节点和具有圆柱形形状并从所述下部第二存储节点向上延伸的上部第二存储节点。