公开(公告)号：US20140219000A1

公开(公告)日：2014-08-07

申请号：US14107199

申请日：2013-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chi-Sung OH ,  Chul-Sung PARK ,  Nak-Won HEO ,  Dong-Hyun SOHN

IPC: G11C17/16 ,  G11C29/52 ,  G06F12/14

CPC classification number: G11C17/16 ,  G06F12/1433 ,  G06F2212/2142 ,  G11C7/24 ,  G11C17/18 ,  G11C29/785 ,  G11C2029/4402

Abstract: A method of programming a memory device including a one-time programmable (OTP) cell array configured to include at least one of a protected area and a programmable area are disclosed. The method includes receiving a fuse-program command to initiate a fuse-programming operation; checking whether the programmable area exists in the OTP cell array, terminating the fuse-programming operation when the OTP cell array does not include the programmable area, performing a fuse-programming operation on the programmable area when the OTP cell array includes the programmable area thereby programming fuses to create a fuse-programmed area; setting the fuse-programmed area of the OTP cell array as the protected area.

Abstract translation: 公开了一种编程包括被配置为包括保护区域和可编程区域中的至少一个的一次可编程（OTP）单元阵列的存储器件的方法。 该方法包括接收熔丝编程命令以启动熔丝编程操作; 检查OTP单元阵列中是否存在可编程区域，当OTP单元阵列不包括可编程区域时终止熔丝编程操作，当OTP单元阵列包括可编程区域时在可编程区域上执行熔丝编程操作，从而 编程保险丝创建熔丝编程区域; 将OTP单元阵列的熔丝编程区域设置为保护区域。

公开(公告)号：US20140169114A1

公开(公告)日：2014-06-19

申请号：US14095179

申请日：2013-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chi-Sung OH

IPC: G11C7/00

CPC classification number: G11C11/40611 ,  G11C2211/4061

Abstract: A volatile memory device includes a memory cell array including a plurality of pages and a refresh control circuit. The refresh control circuit may adjust a refresh interval according to a refresh information signal and refreshes the plurality of pages according to the adjusted refresh interval while refreshing weak pages of the plurality of pages at least twice during a refresh period. Each of the weak pages may include at least a weak cell whose data retention time is shorter than a data retention time of normal cells, and the refresh information signal is based on a number of the weak pages. A memory controller and may generate auto refresh commands for volatile memory device(s) based on refresh information reflecting a number of weak pages of the volatile memory device(s). Systems and methods are also disclosed.

Abstract translation: 易失性存储器件包括包括多个页面的存储单元阵列和刷新控制电路。 刷新控制电路可以根据刷新信息信号调整刷新间隔，并且在刷新周期期间至少刷新多页的弱页面时，根据调整后的刷新间隔刷新多个页面。 每个弱页面可以至少包括其数据保留时间短于正常单元的数据保留时间的弱单元，并且刷新信息信号基于弱页数。 存储器控制器并且可以基于反映易失性存储器设备的弱页数的刷新信息来生成用于易失性存储器设备的自动刷新命令。 还公开了系统和方法。