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公开(公告)号:US20220132701A1
公开(公告)日:2022-04-28
申请号:US17342995
申请日:2021-06-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sungki LEE , Jiyong KIM , Insub KWAK , Suin KIM , Chunghyun RYU
Abstract: A semiconductor device includes a first case, a second case coupled to the first case to form an inner space, a memory module disposed within the inner space, and including a module substrate and a plurality of electronic components mounted on the module substrate, and a heat dissipation chamber assembly provided in at least a portion of the first case, and including a heat diffusion chamber in thermal contact with at least one of the electronic components and a sidewall structure extending vertically toward the module substrate to surround the electronic component in thermal contact with the heat diffusion chamber.
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公开(公告)号:US20210012842A1
公开(公告)日:2021-01-14
申请号:US16846648
申请日:2020-04-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Chunghyun RYU , Jaewoong CHOI
Abstract: A method of providing an auxiliary power by an auxiliary power supply. The method may include converting an external power to a plurality of charging voltages; charging a charging circuit with a first charging voltage of the plurality of charging voltages; monitoring a voltage of the charging circuit; when capacitance of the charging circuit is less than a first reference capacitance, charging the charging circuit with a second charging voltage of the plurality of charging voltages, the second charging voltage being higher than the first charging voltage by a first voltage amount; and providing an auxiliary power to outside the auxiliary power supply. The auxiliary power may be generated based on the voltage of the charging circuit.
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公开(公告)号:US20240096427A1
公开(公告)日:2024-03-21
申请号:US18518651
申请日:2023-11-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Chunghyun RYU , Jaewoong CHOI
CPC classification number: G11C16/30 , G11C5/141 , H02J7/0048 , H02J7/0063 , H02J7/007182 , H02J7/345 , H02J2207/50
Abstract: A method of providing an auxiliary power by an auxiliary power supply. The method may include converting an external power to a plurality of charging voltages; charging a charging circuit with a first charging voltage of the plurality of charging voltages; monitoring a voltage of the charging circuit; when capacitance of the charging circuit is less than a first reference capacitance, charging the charging circuit with a second charging voltage of the plurality of charging voltages, the second charging voltage being higher than the first charging voltage by a first voltage amount; and providing an auxiliary power to outside the auxiliary power supply. The auxiliary power may be generated based on the voltage of the charging circuit.
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公开(公告)号:US20220199122A1
公开(公告)日:2022-06-23
申请号:US17694946
申请日:2022-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Woosung LEE , Chunghyun RYU , Hyoungtaek LIM
Abstract: A memory system and storage device are provided, including: an auxiliary power device having at least one capacitor, wherein the at least one capacitor has a first path for leakage current; a charging circuit including a switch connected to the auxiliary power device; and a state determining circuit connected to the auxiliary power device, wherein the state determining circuit includes a path circuit connected in parallel with the at least one capacitor to form a second path having at least one of a resistance lower than a resistance of the first path or a current source.
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