公开(公告)号：US20180083182A1

公开(公告)日：2018-03-22

申请号：US15827040

申请日：2017-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jea Shik SHIN ,  Duck Hwan KIM ,  Chul Soo KIM ,  Ho Soo PARK ,  Sang Uk SON ,  In Sang SONG ,  Moon Chul LEE ,  Cui JING

IPC: H01L41/107 ,  H03H9/17 ,  H03H9/02

CPC classification number: H01L41/107 ,  H03H9/02102 ,  H03H9/0211 ,  H03H9/173 ,  H03H9/174 ,  H03H9/175

Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer.