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公开(公告)号：US20180083182A1
公开(公告)日：2018-03-22
申请号：US15827040
申请日：2017-11-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jea Shik SHIN , Duck Hwan KIM , Chul Soo KIM , Ho Soo PARK , Sang Uk SON , In Sang SONG , Moon Chul LEE , Cui JING
IPC: H01L41/107 , H03H9/17 , H03H9/02
CPC classification number: H01L41/107 , H03H9/02102 , H03H9/0211 , H03H9/173 , H03H9/174 , H03H9/175
Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer.
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公开(公告)号：US20170250672A1
公开(公告)日：2017-08-31
申请号：US15494866
申请日：2017-04-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jea Shik SHIN , Duck Hwan KIM , Chul Soo KIM , Sang Uk SON , In Sang SONG , Moon Chul LEE
CPC classification number: H03H9/173 , H03H3/02 , H03H9/02118 , H03H2003/021 , Y10T29/42
Abstract: Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit.
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公开(公告)号：US20140191825A1
公开(公告)日：2014-07-10
申请号：US14077777
申请日：2013-11-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang Uk SON , Ho Soo PARK , Jea Shik SHIN , Duck Hwan KIM , Chul Soo KIM , In Sang SONG , Moon Chul LEE
CPC classification number: H03H9/02102 , H03H3/04 , H03H9/173 , H03H9/568 , H03H9/588 , H03H9/605 , H03H2003/0407 , Y10T29/42
Abstract: A radio frequency filter and a manufacturing method thereof are provided. A radio frequency filter includes bulk acoustic wave resonators (BAWRs), the BAWRs including first BAWRs connected in series, second BAWRs connected in parallel, or a combination thereof.
Abstract translation: 提供射频滤波器及其制造方法。 射频滤波器包括体声波谐振器（BAWR），BAWR包括串联连接的第一BAWR，并联的第二BAWR或它们的组合。
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4.发明申请公开(公告)号：US20180076378A1
公开(公告)日：2018-03-15
申请号：US15822378
申请日：2017-11-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hosoo PARK , Duck Hwan KIM , Chul Soo KIM , Sang Uk SON , In Sang SONG , Jeashik SHIN , Moonchul LEE
IPC: H01L41/047 , H03H9/02 , H03H9/13 , H03H9/17 , H01L41/29
CPC classification number: H01L41/047 , H01L41/29 , H03H9/0211 , H03H9/132 , H03H9/174 , H03H9/175 , Y10T29/42
Abstract: A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.
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5.发明申请RADIO FREQUENCY (RF) FILTER AND RF TRANSCEIVER USING BULK ACOUSTIC WAVE RESONATOR (BAWR) 有权无线电频率（RF）滤波器和RF收发器使用大容量声波谐波器（BAWR）公开(公告)号：US20130249643A1
公开(公告)日：2013-09-26
申请号：US13747594
申请日：2013-01-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Duck Hwan KIM , Chul Soo KIM , Seong Joong KIM , In Sang SONG , Jea Shik SHIN
CPC classification number: H03H9/54 , H03H9/02834 , H03H9/173 , H03H9/605
Abstract: A filter and a transceiver in a radio frequency (RF) band, using a bulk acoustic wave resonator (BAWR), are provided. The RF filter includes at least one low temperature coefficient of frequency (TCF) BAWR. The RF filter further includes at least one high quality factor (Q) BAWR including a high Q compared to the at least one low TCF BAWR, the at least one low TCF BAWR including a low TCF compared to the at least one high Q BAWR.
Abstract translation: 提供了使用体声波谐振器（BAWR）的射频（RF）频带中的滤波器和收发器。 RF滤波器包括至少一个低温频率系数（TCF）BAWR。 所述RF滤波器还包括与所述至少一个低TCF BAWR相比包括高Q的至少一个高品质因子（Q）BAWR，所述至少一个低TCF BAWR与所述至少一个高Q BAWR相比包括低TCF。
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Patent Agency Ranking
公开(公告)号：US20200244249A1
公开(公告)日：2020-07-30
申请号：US16851729
申请日：2020-04-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jea Shik SHIN , Duck Hwan KIM , Chul Soo KIM , Sang Uk SON , In Sang SONG , Moon Chul LEE
Abstract: Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit.
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7.发明申请公开(公告)号：US20180076377A1
公开(公告)日：2018-03-15
申请号：US15822341
申请日：2017-11-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hosoo PARK , Duck Hwan KIM , Chul Soo KIM , Sang Uk SON , In Sang SONG , Jeashik SHIN , Moonchul LEE
IPC: H01L41/047 , H03H9/02 , H03H9/13 , H03H9/17 , H01L41/29
Abstract: A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.
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8.发明申请公开(公告)号：US20140070671A1
公开(公告)日：2014-03-13
申请号：US13934835
申请日：2013-07-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hosoo PARK , Duck Hwan KIM , Chul Soo KIM , Sang Uk SON , In Sang SONG , Jeashik SHIN , Moonchul LEE
IPC: H01L41/047 , H01L41/29
CPC classification number: H01L41/047 , H01L41/29 , H03H9/0211 , H03H9/132 , H03H9/174 , H03H9/175 , Y10T29/42
Abstract: A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.
Abstract translation: 提供了使用导电材料处理电损耗的谐振装置和制造谐振装置的方法。 共振装置包括形成在距离基板预定距离的下电极和形成在下电极上的压电层。 谐振装置还包括形成在压电层上的上电极和形成在上电极或下电极上的导电层。
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公开(公告)号：US20210250014A1
公开(公告)日：2021-08-12
申请号：US17245545
申请日：2021-04-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hosoo PARK , Duck Hwan KIM , Chul Soo KIM , Sang Uk SON , In Sang SONG , Jeashik SHIN , Moonchul LEE
Abstract: A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.
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10.发明申请公开(公告)号：US20200274521A1
公开(公告)日：2020-08-27
申请号：US16871316
申请日：2020-05-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hosoo PARK , Duck Hwan KIM , Chul Soo KIM , Sang Uk SON , In Sang SONG , Jeashik SHIN , Moonchul LEE
Abstract: A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.
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