公开(公告)号：US20240292604A1

公开(公告)日：2024-08-29

申请号：US18386654

申请日：2023-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiseong KIM ,  JUNSOO KIM ,  DAEHYUN MOON ,  SUNGHO JANG

IPC: H10B12/00

CPC classification number: H10B12/488 ,  H10B12/315 ,  H10B12/482

Abstract: A semiconductor device includes a substrate including cell regions, active patterns adjacent to each other in first and second directions that are parallel to a lower surface of the substrate and intersect each other on the cell regions, a shield pattern surrounding side surfaces of the active patterns, a first isolation pattern surrounding the active patterns between the active patterns and the shield pattern, second isolation patterns between adjacent active patterns in the first direction, and word lines crossing the active patterns and the shield pattern in the second direction.

公开(公告)号：US20170018552A1

公开(公告)日：2017-01-19

申请号：US15191581

申请日：2016-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： DAEHYUN MOON ,  HyeoungWON SEO ,  Ilgweon KIM ,  JOOYOUNG LEE ,  DONGJIN JUNG

IPC: H01L27/108 ,  H01L21/02

CPC classification number: H01L21/02164 ,  H01L21/02238 ,  H01L21/0228 ,  H01L21/762 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/76232 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L27/10897 ,  H01L29/0649

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of recess regions on an upper surface of a substrate, forming a first oxide layer in the recess regions, forming a polysilicon layer on the first oxide layer, forming a second oxide layer by oxidizing the polysilicon layer, and forming a gap-fill layer on the second oxide layer to fill the recess regions, wherein at least a portion of the polysilicon layer remains between the first oxide layer and the second oxide layer after forming the second oxide layer.

Abstract translation: 一种制造半导体器件的方法包括在衬底的上表面上形成多个凹陷区域，在凹陷区域中形成第一氧化物层，在第一氧化物层上形成多晶硅层，通过氧化第 并且在第二氧化物层上形成间隙填充层以填充凹陷区域，其中在形成第二氧化物层之后，多晶硅层的至少一部分保留在第一氧化物层和第二氧化物层之间。