公开(公告)号：US20140248743A1

公开(公告)日：2014-09-04

申请号：US14278751

申请日：2014-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Ja KIM ,  JUNYOUNG KO ,  DAESANG CHAN

IPC: H01L21/50 ,  H01L23/00

CPC classification number: H01L21/50 ,  H01L23/3157 ,  H01L23/49811 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0655 ,  H01L2224/16225 ,  H01L2224/838 ,  H01L2224/94 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2224/11

Abstract: The inventive concept provides semiconductor memory modules and methods of fabricating the same. The semiconductor memory module may include a module board having a first surface and a second surface opposite to the first surface, and memory chips mounted directly on the module board by a flip-chip bonding method. Each of the memory chips may include a passivation layer disposed on a rear surface of each of the memory chips, and the passivation layer may have a color different from a natural color of single-crystalline silicon.

Abstract translation: 本发明构思提供了半导体存储器模块及其制造方法。 半导体存储器模块可以包括具有与第一表面相对的第一表面和第二表面的模块板，以及通过倒装芯片焊接方法直接安装在模块板上的存储芯片。 每个存储器芯片可以包括设置在每个存储器芯片的后表面上的钝化层，并且钝化层可以具有与单晶硅的自然颜色不同的颜色。

公开(公告)号：US20130270696A1

公开(公告)日：2013-10-17

申请号：US13831272

申请日：2013-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Ja KIM ,  JUNYOUNG KO ,  DAESANG CHAN

IPC: H01L23/498

CPC classification number: H01L21/50 ,  H01L23/3157 ,  H01L23/49811 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0655 ,  H01L2224/16225 ,  H01L2224/838 ,  H01L2224/94 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2224/11

Abstract: The inventive concept provides semiconductor memory modules and methods of fabricating the same. The semiconductor memory module may include a module board having a first surface and a second surface opposite to the first surface, and memory chips mounted directly on the module board by a flip-chip bonding method. Each of the memory chips may include a passivation layer disposed on a rear surface of each of the memory chips, and the passivation layer may have a color different from a natural color of single-crystalline silicon.

Abstract translation: 本发明构思提供了半导体存储器模块及其制造方法。 半导体存储器模块可以包括具有与第一表面相对的第一表面和第二表面的模块板，以及通过倒装芯片焊接方法直接安装在模块板上的存储芯片。 每个存储器芯片可以包括设置在每个存储器芯片的后表面上的钝化层，并且钝化层可以具有与单晶硅的自然颜色不同的颜色。