公开(公告)号：US20240347631A1

公开(公告)日：2024-10-17

申请号：US18509483

申请日：2023-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seonhaeng LEE ,  DONGHEE SON

IPC: H01L29/78 ,  H10B12/00

CPC classification number: H01L29/7831 ,  H10B12/482 ,  H10B12/485 ,  H10B12/488

Abstract: A semiconductor device includes an outer active pattern on a substrate, the outer active pattern having a trench crossing the outer active pattern, an outer word line covering a wall of the trench, an inner active pattern covering the outer word line in the trench, an inner word line covering the inner active pattern in the trench, and a separation insulating pattern interposed between the outer word line and the inner active pattern in the trench. The outer word line and the inner word line are insulated from each other.