公开(公告)号：US09305921B2

公开(公告)日：2016-04-05

申请号：US14565903

申请日：2014-12-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Chan Lee ,  Seung-Jae Lee ,  Sang-Bom Kang ,  Dae-Young Kwak ,  Myeong-Cheol Kim ,  Yong-Ho Jeon

IPC: H01L31/058 ,  H01L27/088 ,  H01L21/764 ,  H01L27/11 ,  H01L27/12

CPC classification number: H01L27/088 ,  H01L21/764 ,  H01L27/0886 ,  H01L27/1116 ,  H01L27/1211

Abstract: A semiconductor device including: a first gate pattern disposed in a peripheral region of a substrate; a second gate pattern disposed in a cell region of the substrate; a first insulator formed on sidewalls of the first gate pattern; and a second insulator formed on sidewalls of the second gate pattern, wherein a dielectric constant of the first insulator is different from a dielectric constant of the second insulator, and wherein a height of the second insulator is greater than a height of the second gate pattern.

Abstract translation: 一种半导体器件，包括：设置在衬底的周边区域中的第一栅极图案; 设置在所述基板的单元区域中的第二栅极图案; 形成在第一栅极图案的侧壁上的第一绝缘体; 以及形成在所述第二栅极图案的侧壁上的第二绝缘体，其中所述第一绝缘体的介电常数不同于所述第二绝缘体的介电常数，并且其中所述第二绝缘体的高度大于所述第二栅极图案的高度 。

公开(公告)号：US20160380050A1

公开(公告)日：2016-12-29

申请号：US15137946

申请日：2016-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-Young Kwak ,  Kyung-Seok Oh ,  Seung-Jae Lee ,  Sang-Jin Hyun

IPC: H01L29/06 ,  H01L21/31 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/31 ,  H01L21/823431 ,  H01L27/0886

Abstract: A semiconductor device is provided as follows. A first fin-type pattern is disposed on a substrate. A first field insulating film is adjacent to a sidewall of the first fin-type pattern. A second field insulating film is adjacent to a sidewall of the first field insulating film. The first field insulating film is interposed between the first fin-type pattern and the second field insulating film. The second field insulating film comprises a first region and a second region. The first region is closer to the sidewall of the first field insulating film. A height from a bottom of the second field insulating film to an upper surface of the second region is larger than a height from the bottom of the second field insulating film to an upper surface of the first region.

Abstract translation: 如下提供半导体器件。 第一鳍型图案设置在基板上。 第一场绝缘膜与第一鳍型图案的侧壁相邻。 第二场绝缘膜与第一场绝缘膜的侧壁相邻。 第一场绝缘膜介于第一鳍型和第二场绝缘膜之间。 第二场绝缘膜包括第一区域和第二区域。 第一区域更靠近第一场绝缘膜的侧壁。 从第二场绝缘膜的底部到第二区域的上表面的高度大于从第二场绝缘膜的底部到第一区域的上表面的高度。

公开(公告)号：US20190058035A1

公开(公告)日：2019-02-21

申请号：US15955241

申请日：2018-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Guyoung Cho ,  Dae-Young Kwak ,  Shinhye Kim ,  Koungmin Ryu ,  Sangjin Hyun

IPC: H01L29/06 ,  H01L29/78 ,  H01L27/088

Abstract: A semiconductor device includes active patterns protruding from a substrate and an insulation structure surrounding lower portions of the active patterns. The insulation structure includes an insulation layer conforming to a top surface of the substrate and to sidewalls of the active patterns and a buried insulation pattern on the insulation layer.

公开(公告)号：US10032641B2

公开(公告)日：2018-07-24

申请号：US15137946

申请日：2016-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-Young Kwak ,  Kyung-Seok Oh ,  Seung-Jae Lee ,  Sang-Jin Hyun

IPC: H01L27/088 ,  H01L21/31 ,  H01L21/8234

CPC classification number: H01L21/31 ,  H01L21/823431 ,  H01L27/0886

Abstract: A semiconductor device is provided as follows. A first fin-type pattern is disposed on a substrate. A first field insulating film is adjacent to a sidewall of the first fin-type pattern. A second field insulating film is adjacent to a sidewall of the first field insulating film. The first field insulating film is interposed between the first fin-type pattern and the second field insulating film. The second field insulating film comprises a first region and a second region. The first region is closer to the sidewall of the first field insulating film. A height from a bottom of the second field insulating film to an upper surface of the second region is larger than a height from the bottom of the second field insulating film to an upper surface of the first region.

公开(公告)号：US20150145056A1

公开(公告)日：2015-05-28

申请号：US14565903

申请日：2014-12-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Chan Lee ,  Seung-Jae Lee ,  Sang-Bom Kang ,  Dae-Young Kwak ,  Myeong-Cheol Kim ,  Yong-Ho Jeon

IPC: H01L27/088

CPC classification number: H01L27/088 ,  H01L21/764 ,  H01L27/0886 ,  H01L27/1116 ,  H01L27/1211

Abstract: A semiconductor device including: a first gate pattern disposed in a peripheral region of a substrate; a second gate pattern disposed in a cell region of the substrate; a first insulator formed on sidewalls of the first gate pattern; and a second insulator formed on sidewalls of the second gate pattern, wherein a dielectric constant of the first insulator is different from a dielectric constant of the second insulator, and wherein a height of the second insulator is greater than a height of the second gate pattern.

Abstract translation: 一种半导体器件，包括：设置在衬底的周边区域中的第一栅极图案; 设置在所述基板的单元区域中的第二栅极图案; 形成在第一栅极图案的侧壁上的第一绝缘体; 以及形成在所述第二栅极图案的侧壁上的第二绝缘体，其中所述第一绝缘体的介电常数不同于所述第二绝缘体的介电常数，并且其中所述第二绝缘体的高度大于所述第二栅极图案的高度 。