公开(公告)号：US11342328B2

公开(公告)日：2022-05-24

申请号：US16943208

申请日：2020-07-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Guyoung Cho ,  Subin Shin ,  Donghyun Roh ,  Byung-Suk Jung ,  Sangjin Hyun

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/78

Abstract: Disclosed is a semiconductor device comprising a substrate, a plurality of active patterns that protrude from the substrate, a device isolation layer between the active patterns, and a passivation layer that covers a top surface of the device isolation layer and exposes upper portions of the active patterns. The device isolation layer includes a plurality of first isolation parts adjacent to facing sidewalls of the active patterns, and a second isolation part between the first isolation parts. A top surface of the second isolation part is located at a lower level than that of top surfaces of the first isolation parts.

公开(公告)号：US12027524B2

公开(公告)日：2024-07-02

申请号：US18200986

申请日：2023-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Guyoung Cho ,  Subin Shin ,  Donghyun Roh ,  Byung-Suk Jung ,  Sangjin Hyun

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L27/0924 ,  H01L21/823821 ,  H01L29/0649 ,  H01L29/7851

Abstract: Disclosed is a semiconductor device comprising a substrate, a plurality of active patterns that protrude from the substrate, a device isolation layer between the active patterns, and a passivation layer that covers a top surface of the device isolation layer and exposes upper portions of the active patterns. The device isolation layer includes a plurality of first isolation parts adjacent to facing sidewalls of the active patterns, and a second isolation part between the first isolation parts. A top surface of the second isolation part is located at a lower level than that of top surfaces of the first isolation parts.

公开(公告)号：US20190058035A1

公开(公告)日：2019-02-21

申请号：US15955241

申请日：2018-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Guyoung Cho ,  Dae-Young Kwak ,  Shinhye Kim ,  Koungmin Ryu ,  Sangjin Hyun

IPC: H01L29/06 ,  H01L29/78 ,  H01L27/088

Abstract: A semiconductor device includes active patterns protruding from a substrate and an insulation structure surrounding lower portions of the active patterns. The insulation structure includes an insulation layer conforming to a top surface of the substrate and to sidewalls of the active patterns and a buried insulation pattern on the insulation layer.

公开(公告)号：US11676967B2

公开(公告)日：2023-06-13

申请号：US17749211

申请日：2022-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Guyoung Cho ,  Subin Shin ,  Donghyun Roh ,  Byung-Suk Jung ,  Sangjin Hyun

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L27/0924 ,  H01L21/823821 ,  H01L29/0649 ,  H01L29/7851

Abstract: Disclosed is a semiconductor device comprising a substrate, a plurality of active patterns that protrude from the substrate, a device isolation layer between the active patterns, and a passivation layer that covers a top surface of the device isolation layer and exposes upper portions of the active patterns. The device isolation layer includes a plurality of first isolation parts adjacent to facing sidewalls of the active patterns, and a second isolation part between the first isolation parts. A top surface of the second isolation part is located at a lower level than that of top surfaces of the first isolation parts.

公开(公告)号：US10784262B2

公开(公告)日：2020-09-22

申请号：US16273572

申请日：2019-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Guyoung Cho ,  Subin Shin ,  Donghyun Roh ,  Byung-Suk Jung ,  Sangjin Hyun

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/78

Abstract: Disclosed is a semiconductor device comprising a substrate, a plurality of active patterns that protrude from the substrate, a device isolation layer between the active patterns, and a passivation layer that covers a top surface of the device isolation layer and exposes upper portions of the active patterns. The device isolation layer includes a plurality of first isolation parts adjacent to facing sidewalls of the active patterns, and a second isolation part between the first isolation parts. A top surface of the second isolation part is located at a lower level than that of top surfaces of the first isolation parts.