公开(公告)号：US09831164B2

公开(公告)日：2017-11-28

申请号：US13756593

申请日：2013-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-jin Moon ,  Pil-kyu Kang ,  Dae-lok Bae ,  Gil-heyun Choi ,  Byung-lyul Park ,  Dong-chan Lim ,  Deok-young Jung

IPC: H01L23/48 ,  H01L23/498 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L23/49827 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a via structure and a conductive structure. The via structure has a surface with a planar portion and a protrusion portion. The conductive structure is formed over at least part of the planar portion and not over at least part of the protrusion portion of the via structure. For example, the conductive structure is formed only onto the planar portion and not onto any of the protrusion portion for forming high quality connection between the conductive structure and the via structure.