SEMICONDUCTOR MEASUREMENT APPARATUS
    1.
    发明公开

    公开(公告)号:US20240230314A9

    公开(公告)日:2024-07-11

    申请号:US18317395

    申请日:2023-05-15

    CPC classification number: G01B9/02044 G01B9/02097 G01B2210/56 G01B2290/70

    Abstract: A semiconductor measurement apparatus may include an illumination unit configured to irradiate light to the sample, an image sensor configured to receive light reflected from the sample and output multiple interference images representing interference patterns of polarization components of light, an optical unit in a path through which the image sensor receives light and including an objective lens above the sample, and a control unit configured to obtain, by processing the multi-interference image, measurement parameters determined from the polarization components at each of a plurality of azimuth angles defined on a plane perpendicular to a path of light incident to the image sensor. The control unit may be configured to determine a selected critical dimension to be measured from a structure in the sample based on measurement parameters. The illumination unit and/or the optical unit may include a polarizer and a compensator having a ¼ wave plate.

    SEMICONDUCTOR MEASUREMENT APPARATUS
    2.
    发明公开

    公开(公告)号:US20240133673A1

    公开(公告)日:2024-04-25

    申请号:US18317395

    申请日:2023-05-14

    CPC classification number: G01B9/02044 G01B9/02097 G01B2210/56 G01B2290/70

    Abstract: A semiconductor measurement apparatus may include an illumination unit configured to irradiate light to the sample, an image sensor configured to receive light reflected from the sample and output multiple interference images representing interference patterns of polarization components of light, an optical unit in a path through which the image sensor receives light and including an objective lens above the sample, and a control unit configured to obtain, by processing the multi-interference image, measurement parameters determined from the polarization components at each of a plurality of azimuth angles defined on a plane perpendicular to a path of light incident to the image sensor. The control unit may be configured to determine a selected critical dimension to be measured from a structure in the sample based on measurement parameters. The illumination unit and/or the optical unit may include a polarizer and a compensator having a ¼ wave plate.

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