SEMICONDUCTOR MEASUREMENT APPARATUS
    2.
    发明公开

    公开(公告)号:US20240230314A9

    公开(公告)日:2024-07-11

    申请号:US18317395

    申请日:2023-05-15

    CPC classification number: G01B9/02044 G01B9/02097 G01B2210/56 G01B2290/70

    Abstract: A semiconductor measurement apparatus may include an illumination unit configured to irradiate light to the sample, an image sensor configured to receive light reflected from the sample and output multiple interference images representing interference patterns of polarization components of light, an optical unit in a path through which the image sensor receives light and including an objective lens above the sample, and a control unit configured to obtain, by processing the multi-interference image, measurement parameters determined from the polarization components at each of a plurality of azimuth angles defined on a plane perpendicular to a path of light incident to the image sensor. The control unit may be configured to determine a selected critical dimension to be measured from a structure in the sample based on measurement parameters. The illumination unit and/or the optical unit may include a polarizer and a compensator having a ¼ wave plate.

    SEMICONDUCTOR MEASUREMENT APPARATUS
    3.
    发明公开

    公开(公告)号:US20240133673A1

    公开(公告)日:2024-04-25

    申请号:US18317395

    申请日:2023-05-14

    CPC classification number: G01B9/02044 G01B9/02097 G01B2210/56 G01B2290/70

    Abstract: A semiconductor measurement apparatus may include an illumination unit configured to irradiate light to the sample, an image sensor configured to receive light reflected from the sample and output multiple interference images representing interference patterns of polarization components of light, an optical unit in a path through which the image sensor receives light and including an objective lens above the sample, and a control unit configured to obtain, by processing the multi-interference image, measurement parameters determined from the polarization components at each of a plurality of azimuth angles defined on a plane perpendicular to a path of light incident to the image sensor. The control unit may be configured to determine a selected critical dimension to be measured from a structure in the sample based on measurement parameters. The illumination unit and/or the optical unit may include a polarizer and a compensator having a ¼ wave plate.

    METHOD OF MANAGING SEMICONDUCTOR PROCESSING APPARATUS

    公开(公告)号:US20240272561A1

    公开(公告)日:2024-08-15

    申请号:US18373030

    申请日:2023-09-26

    Abstract: Provided is a method of managing a semiconductor processing apparatus, including irradiating, by a light source, a plurality of regions included in a diffuser on a mask stage with extreme ultraviolet (EUV) light, reflecting or transmitting, by the diffuser, the EUV light, transmitting, by an optical system, the EUV light from the diffuser, receiving, by an image sensor, the EUV light from the optical system, obtaining, by the image sensor, a plurality of original images corresponding to the plurality of regions, generating, based on an optical prediction model, a plurality of predictive images estimating a diffraction pattern in the image sensor, adjusting an optical prediction model by comparing the plurality of predictive images with the plurality of original images, and generating, based on the optical prediction model, a plurality of wavefront images corresponding to optical characteristics of each of the plurality of mirrors.

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