公开(公告)号：US20240389470A1

公开(公告)日：2024-11-21

申请号：US18531200

申请日：2023-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kilho LEE ,  Dahye SHIN

IPC: H10N50/80 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10

Abstract: Provided is a nonvolatile memory device equipped with an information storage device with improved reliability. The nonvolatile memory device includes a substrate in which a cell area and a peripheral area are defined, a multi-wire layer disposed on the cell area and the peripheral area and including metal wires of a multilayer, and an information storing layer including a plurality of information storage devices arranged on the multi-wire layer of the cell area in a two-dimensional array structure, in which a first metal wire arranged in an uppermost portion of the multi-wire layer of the peripheral area is located at a level lower than a level of a second metal wire arranged in an uppermost portion of the multi-wire layer of the cell area.