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公开(公告)号:US20170271462A1
公开(公告)日:2017-09-21
申请号:US15604687
申请日:2017-05-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jin-bum KIM , Chul-sung KIM , Deok-han BAE , Bon-young KOO
IPC: H01L29/417 , H01L21/8238 , H01L27/092
CPC classification number: H01L29/41783 , H01L21/823814 , H01L21/823821 , H01L21/823871 , H01L27/0924 , H01L29/165 , H01L29/66545 , H01L29/7848 , H01L29/785
Abstract: A semiconductor device may include a substrate including an NMOS region and a PMOS region, and having a protrusion pattern; first and second gate structures respectively formed on the NMOS region and the PMOS region of the substrate, crossing the protrusion pattern, and extending along a first direction that is parallel to an upper surface of the substrate; first and second source/drain regions formed on both sides of the first and second gate structures; and first and second contact plugs respectively formed on the first and second source/drain regions, wherein the first contact plug and the second contact plug are asymmetric. Methods of manufacturing are also provided.