公开(公告)号：US20170271462A1

公开(公告)日：2017-09-21

申请号：US15604687

申请日：2017-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-bum KIM ,  Chul-sung KIM ,  Deok-han BAE ,  Bon-young KOO

IPC: H01L29/417 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L29/41783 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L27/0924 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device may include a substrate including an NMOS region and a PMOS region, and having a protrusion pattern; first and second gate structures respectively formed on the NMOS region and the PMOS region of the substrate, crossing the protrusion pattern, and extending along a first direction that is parallel to an upper surface of the substrate; first and second source/drain regions formed on both sides of the first and second gate structures; and first and second contact plugs respectively formed on the first and second source/drain regions, wherein the first contact plug and the second contact plug are asymmetric. Methods of manufacturing are also provided.

公开(公告)号：US20190287797A1

公开(公告)日：2019-09-19

申请号：US16422375

申请日：2019-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-suk TAK ,  Tae-jong LEE ,  Bon-young KOO ,  Ki-yeon PARK ,  Sung-hyun CHOI

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/30 ,  H01L29/66 ,  H01L29/49 ,  H01L27/11 ,  H01L27/092

Abstract: A method of forming a SiOCN material layer, a material layer stack, a semiconductor device, a method of fabricating a semiconductor device, and a deposition apparatus, the method of forming a SiOCN material layer including providing a substrate; providing a silicon precursor onto the substrate; providing an oxygen reactant onto the substrate; providing a first carbon precursor onto the substrate; providing a second carbon precursor onto the substrate; and providing a nitrogen reactant onto the substrate, wherein the first carbon precursor and the second carbon precursor are different materials.

公开(公告)号：US20170117140A1

公开(公告)日：2017-04-27

申请号：US15296220

申请日：2016-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-suk TAK ,  Tae-jong LEE ,  Bon-young KOO ,  Ki-yeon PARK ,  Sung-hyun CHOI

IPC: H01L21/02 ,  H01L29/49 ,  C23C16/455 ,  H01L27/092 ,  H01L27/11 ,  H01L21/28 ,  H01L29/66 ,  H01L29/78

Abstract: A method of forming a SiOCN material layer, a material layer stack, a semiconductor device, a method of fabricating a semiconductor device, and a deposition apparatus, the method of forming a SiOCN material layer including providing a substrate; providing a silicon precursor onto the substrate; providing an oxygen reactant onto the substrate; providing a first carbon precursor onto the substrate; providing a second carbon precursor onto the substrate; and providing a nitrogen reactant onto the substrate, wherein the first carbon precursor and the second carbon precursor are different materials.