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公开(公告)号:US20170271462A1
公开(公告)日:2017-09-21
申请号:US15604687
申请日:2017-05-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jin-bum KIM , Chul-sung KIM , Deok-han BAE , Bon-young KOO
IPC: H01L29/417 , H01L21/8238 , H01L27/092
CPC classification number: H01L29/41783 , H01L21/823814 , H01L21/823821 , H01L21/823871 , H01L27/0924 , H01L29/165 , H01L29/66545 , H01L29/7848 , H01L29/785
Abstract: A semiconductor device may include a substrate including an NMOS region and a PMOS region, and having a protrusion pattern; first and second gate structures respectively formed on the NMOS region and the PMOS region of the substrate, crossing the protrusion pattern, and extending along a first direction that is parallel to an upper surface of the substrate; first and second source/drain regions formed on both sides of the first and second gate structures; and first and second contact plugs respectively formed on the first and second source/drain regions, wherein the first contact plug and the second contact plug are asymmetric. Methods of manufacturing are also provided.
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公开(公告)号:US20190287797A1
公开(公告)日:2019-09-19
申请号:US16422375
申请日:2019-05-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yong-suk TAK , Tae-jong LEE , Bon-young KOO , Ki-yeon PARK , Sung-hyun CHOI
IPC: H01L21/02 , C23C16/455 , C23C16/30 , H01L29/66 , H01L29/49 , H01L27/11 , H01L27/092
Abstract: A method of forming a SiOCN material layer, a material layer stack, a semiconductor device, a method of fabricating a semiconductor device, and a deposition apparatus, the method of forming a SiOCN material layer including providing a substrate; providing a silicon precursor onto the substrate; providing an oxygen reactant onto the substrate; providing a first carbon precursor onto the substrate; providing a second carbon precursor onto the substrate; and providing a nitrogen reactant onto the substrate, wherein the first carbon precursor and the second carbon precursor are different materials.
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公开(公告)号:US20170117140A1
公开(公告)日:2017-04-27
申请号:US15296220
申请日:2016-10-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yong-suk TAK , Tae-jong LEE , Bon-young KOO , Ki-yeon PARK , Sung-hyun CHOI
IPC: H01L21/02 , H01L29/49 , C23C16/455 , H01L27/092 , H01L27/11 , H01L21/28 , H01L29/66 , H01L29/78
Abstract: A method of forming a SiOCN material layer, a material layer stack, a semiconductor device, a method of fabricating a semiconductor device, and a deposition apparatus, the method of forming a SiOCN material layer including providing a substrate; providing a silicon precursor onto the substrate; providing an oxygen reactant onto the substrate; providing a first carbon precursor onto the substrate; providing a second carbon precursor onto the substrate; and providing a nitrogen reactant onto the substrate, wherein the first carbon precursor and the second carbon precursor are different materials.
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