公开(公告)号：US20190074179A1

公开(公告)日：2019-03-07

申请号：US16120728

申请日：2018-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-jin PARK ,  Bong-soo KIM ,  Jin-bum KIM ,  Yoo-sang HWANG

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L29/423 ,  H01L29/78 ,  H01L29/06

Abstract: A method of fabricating a device including a two-dimensional (2D) material includes forming an amorphous transition metal oxide structure on a substrate and replacing the amorphous transition metal oxide structure by a transition metal dichalcogenide structure. The transition metal dichalcogenide structure includes atomic layers, that are substantially parallel to a surface of the transition metal dichalcogenide structure.

公开(公告)号：US20170271462A1

公开(公告)日：2017-09-21

申请号：US15604687

申请日：2017-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-bum KIM ,  Chul-sung KIM ,  Deok-han BAE ,  Bon-young KOO

IPC: H01L29/417 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L29/41783 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L27/0924 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device may include a substrate including an NMOS region and a PMOS region, and having a protrusion pattern; first and second gate structures respectively formed on the NMOS region and the PMOS region of the substrate, crossing the protrusion pattern, and extending along a first direction that is parallel to an upper surface of the substrate; first and second source/drain regions formed on both sides of the first and second gate structures; and first and second contact plugs respectively formed on the first and second source/drain regions, wherein the first contact plug and the second contact plug are asymmetric. Methods of manufacturing are also provided.