公开(公告)号：US20240074163A1

公开(公告)日：2024-02-29

申请号：US18365397

申请日：2023-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yangdoo KIM ,  Sangwuk PARK ,  Minkyu SUH ,  Geonyeop LEE ,  Dokeun LEE ,  Jungpyo HONG

IPC: H10B12/00

CPC classification number: H10B12/488 ,  H10B12/315 ,  H10B12/485

Abstract: An integrated circuit device includes a substrate having a plurality of active regions defined therein, a first word line structure including a first word line, a first gate dielectric film surrounding the first word line, and an oxide semiconductor channel layer surrounding the first gate dielectric film, the first word line structure being buried in the substrate, and crossing a first active region of the plurality of active regions, a second word line structure including a second word line and a second gate dielectric film surrounding the second word line, the second word line structure being buried in the substrate and separated from the first word line structure, and crossing the first active region, a direct contact partially passing through the first active region and the first word line structure and contacting the oxide semiconductor channel layer, and a bit line contacting the direct contact.

公开(公告)号：US20230320061A1

公开(公告)日：2023-10-05

申请号：US17979069

申请日：2022-11-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minkyu SUH ,  Yangdoo KIM ,  Yonghwan KIM ,  Sangwuk PARK ,  Geonyeop LEE ,  Dokeun LEE ,  Jungpyo HONG

IPC: H01L27/108

CPC classification number: H01L27/1085

Abstract: A method of manufacturing an integrated circuit device includes forming a mold structure, which has a mold layer and a support layer sequentially stacked, on a substrate, forming a vertical hole through the mold structure in a vertical direction and a bowing space extending outward from the vertical hole in a horizontal direction in a first vertical level area, exposing the vertical hole and the bowing space to a preprocessing atmosphere to make the support layer have a first surface state and the mold layer have a second surface state different from the first surface state, forming a bowing complementary pattern filling the bowing space by a selective deposition process using the difference between the first surface state and the second surface state, and forming a lower electrode in the vertical hole and in contact with the mold layer, the support layer, and the bowing complementary pattern.