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公开(公告)号：US20250004381A1
公开(公告)日：2025-01-02
申请号：US18432182
申请日：2024-02-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyungju Ryu , Dokyeong Kwon , Sangjin Kim , Changmin Park
IPC: G03F7/38
Abstract: Methods of forming a photoresist pattern are provided. A photoresist layer may be formed on a substrate. An exposure process may be performed on the photoresist layer. A post exposure baking (PEB) process may be performed on the photoresist layer with a temperature gradient in the photoresist layer in a vertical direction substantially perpendicular to an upper surface of the substrate. A development process may be performed on the photoresist layer.
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