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公开(公告)号:US12255218B2
公开(公告)日:2025-03-18
申请号:US17514256
申请日:2021-10-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dong Young Jang
IPC: H01L27/146 , H01L27/148
Abstract: An image sensor is provided. The image sensor may include a substrate including first and second surfaces opposite to each other, a device isolation layer extending through the substrate and having a surface level with the second surface of the substrate, an active region comprising first and second pixel regions spaced apart and separated from each other by the device isolation layer, a photoelectric device located in the substrate and configured to convert light into electric charges, a microlens on the first surface, a first select transistor and a first source follower transistor in the first pixel region, a second source follower transistor in the second pixel region, a first node between the first select transistor and the first source follower transistor, on the first pixel region, and a second node on one side of the first select transistor on the first pixel region.
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公开(公告)号:US09960201B2
公开(公告)日:2018-05-01
申请号:US14830926
申请日:2015-08-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kyung Ho Lee , Seung Joo Nah , Young Sun Oh , Dong Young Jang
IPC: H01L31/062 , H01L31/113 , H01L27/146
CPC classification number: H01L27/14643 , H01L27/14603 , H01L27/1461 , H01L27/14614 , H01L27/14616 , H01L27/1463 , H01L27/14641 , H01L27/14689
Abstract: A pixel of an image sensor includes a well below a gate and containing a dopant at a first concentration, a shallow trench isolation (STI) configured to electrically isolate the well, and a channel stop adjacent to at least one border between the well and the STI and containing a dopant at a second concentration higher than the first concentration.
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