公开(公告)号：US12255218B2

公开(公告)日：2025-03-18

申请号：US17514256

申请日：2021-10-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Young Jang

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor is provided. The image sensor may include a substrate including first and second surfaces opposite to each other, a device isolation layer extending through the substrate and having a surface level with the second surface of the substrate, an active region comprising first and second pixel regions spaced apart and separated from each other by the device isolation layer, a photoelectric device located in the substrate and configured to convert light into electric charges, a microlens on the first surface, a first select transistor and a first source follower transistor in the first pixel region, a second source follower transistor in the second pixel region, a first node between the first select transistor and the first source follower transistor, on the first pixel region, and a second node on one side of the first select transistor on the first pixel region.

公开(公告)号：US09960201B2

公开(公告)日：2018-05-01

申请号：US14830926

申请日：2015-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Ho Lee ,  Seung Joo Nah ,  Young Sun Oh ,  Dong Young Jang

IPC: H01L31/062 ,  H01L31/113 ,  H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14689

Abstract: A pixel of an image sensor includes a well below a gate and containing a dopant at a first concentration, a shallow trench isolation (STI) configured to electrically isolate the well, and a channel stop adjacent to at least one border between the well and the STI and containing a dopant at a second concentration higher than the first concentration.