Image sensors
    1.
    发明授权

    公开(公告)号:US12255218B2

    公开(公告)日:2025-03-18

    申请号:US17514256

    申请日:2021-10-29

    Inventor: Dong Young Jang

    Abstract: An image sensor is provided. The image sensor may include a substrate including first and second surfaces opposite to each other, a device isolation layer extending through the substrate and having a surface level with the second surface of the substrate, an active region comprising first and second pixel regions spaced apart and separated from each other by the device isolation layer, a photoelectric device located in the substrate and configured to convert light into electric charges, a microlens on the first surface, a first select transistor and a first source follower transistor in the first pixel region, a second source follower transistor in the second pixel region, a first node between the first select transistor and the first source follower transistor, on the first pixel region, and a second node on one side of the first select transistor on the first pixel region.

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