公开(公告)号：US20170141297A1

公开(公告)日：2017-05-18

申请号：US15080572

申请日：2016-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro APALKOV ,  Donkoun LEE ,  Mohamad KROUNBI

IPC: H01L43/08 ,  H01L43/10

CPC classification number: H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic memory device and a method to make the device is disclosed. The magnetic memory device comprises a free magnetic layer that includes a hard magnetic material layer, a soft magnetic material layer and a coupling layer that is between the hard magnetic material layer and the soft magnetic material layer. The coupling layer comprises a magnetic material that has oxidized edges. In one embodiment, the magnetic material of the coupling layer comprises a Heusler alloy or a silicon-based magnetic material. A predetermined amount of the coupling layer is oxidized to controllably reduce the switching current Jc0 of the free magnetic layer to be about half of the switching current if the coupling layer comprised substantially all magnetic material and no oxide.