公开(公告)号：US10923420B2

公开(公告)日：2021-02-16

申请号：US15873352

申请日：2018-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： In Wook Oh ,  Dong Hyun Kim ,  Doo Hwan Park ,  Sung Keun Park ,  Chul Hong Park ,  Sung Wook Hwang

IPC: H01L23/528 ,  H01L23/522 ,  H01L21/768 ,  H01L21/311 ,  H01L23/532 ,  H01L21/285

Abstract: A semiconductor device includes a plurality of main contact plugs and a plurality of dummy contact plugs which pass through an insulating layer on a substrate. A plurality of upper interconnections is on the insulating layer. The plurality of dummy contact plugs include a first dummy contact plug. The plurality of upper interconnections include a first upper interconnection overlapping the first dummy contact plug. A vertical central axis of the first dummy contact plug is located outside the first upper interconnection.