公开(公告)号：US20190181088A1

公开(公告)日：2019-06-13

申请号：US16039838

申请日：2018-07-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eui Bok Lee ,  Deok Young JUNG ,  Sang Bom KANG ,  Doo-Hwan PARK ,  Jong Min BAEK ,  Sang Hoon AHN ,  Hyeok Sang OH ,  Woo Kyung YOU

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/528

Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate, a first insulating film on the substrate, a lower metal layer in the first insulating film, and a second insulating film on the first insulating film. The lower metal layer may be in the second insulating film, the second insulating film may include a lower surface facing the substrate and an upper surface that is opposite the lower surface, and the upper surface of the second insulating film may be upwardly convex. The semiconductor devices may further include a barrier dielectric film including a recess on the second insulating film, and a via metal layer that is in the recess of the barrier dielectric film and electrically connected with the lower metal layer. The first insulating film and the second insulating film may be sequentially stacked on the substrate in a vertical direction, and a longest vertical distance between an upper surface of the lower metal layer and the substrate may be less than a longest vertical distance between the upper surface of the second insulating film and the substrate.