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    SEMICONDUCTOR DEVICES
    1.
    发明申请
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20190181088A1

    公开(公告)日：2019-06-13

    申请号：US16039838

    申请日：2018-07-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eui Bok Lee ,  Deok Young JUNG ,  Sang Bom KANG ,  Doo-Hwan PARK ,  Jong Min BAEK ,  Sang Hoon AHN ,  Hyeok Sang OH ,  Woo Kyung YOU

    IPC: H01L23/522 ,  H01L21/768 ,  H01L23/528

    Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate, a first insulating film on the substrate, a lower metal layer in the first insulating film, and a second insulating film on the first insulating film. The lower metal layer may be in the second insulating film, the second insulating film may include a lower surface facing the substrate and an upper surface that is opposite the lower surface, and the upper surface of the second insulating film may be upwardly convex. The semiconductor devices may further include a barrier dielectric film including a recess on the second insulating film, and a via metal layer that is in the recess of the barrier dielectric film and electrically connected with the lower metal layer. The first insulating film and the second insulating film may be sequentially stacked on the substrate in a vertical direction, and a longest vertical distance between an upper surface of the lower metal layer and the substrate may be less than a longest vertical distance between the upper surface of the second insulating film and the substrate.

    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220392841A1

    公开(公告)日：2022-12-08

    申请号：US17671088

    申请日：2022-02-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung Jin KANG ,  Jong Min BAEK ,  Deok Young JUNG ,  Jun Hyuk LIM

    IPC: H01L23/535 ,  H01L23/528 ,  H01L21/768

    Abstract: A semiconductor device includes an etching stop film disposed on a substrate; an interlayer insulating film on the etching stop film; a first trench and a second trench which are spaced apart in a first direction, and penetrate the etching stop film and the interlayer insulating film, the first trench having a side wall that exposes the interlayer insulating film, and the second trench having a side wall that exposes the interlayer insulating film; a first spacer which covers the interlayer insulating film exposed by the side wall of the first trench and does not cover a portion of the side wall of the first trench; a second spacer which covers the interlayer insulating film exposed by the side wall of the second trench and does not cover a portion of the side wall of the second trench; a first barrier layer which extends along a side wall of the first spacer, the portion of the side wall of the first trench not covered by the first spacer, and a bottom surface of the first trench; a first filling film which fills the first trench, on the first barrier layer; a second barrier layer which extends along a side wall of the second spacer, the portion of the side wall of the second trench not covered by the second spacer, and a bottom surface of the second trench; and a second filling film which fills the second trench on the second barrier layer. I In the first direction, a width of the first trench and a width of the second trench are different from each other, and at a first height from a bottom surface of the substrate, a thickness of the first spacer on the side wall of the first trench is different from a thickness of the second spacer on the side wall of the second trench.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220392800A1

    公开(公告)日：2022-12-08

    申请号：US17739114

    申请日：2022-05-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jun Hyuk LIM ,  Jong Min BAEK ,  Deok Young JUNG ,  Sung Jin KANG ,  Jang Ho LEE

    IPC: H01L21/768 ,  H01L23/522 ,  H01L21/8234

    Abstract: There is provided a semiconductor device including an etching stop film which is placed disposed on a substrate; an interlayer insulating film which is disposed on the etching stop film; a trench which penetrates the interlayer insulating film and the etching stop film; a spacer which extends along side walls of the trench; a barrier film which extends along the spacer and a bottom surface of the trench; and a filling film which fills the trench on the barrier film. The trench includes a first trench and a second trench which are spaced apart from each other in a first direction and have different widths from each other in the first direction. A bottom surface of the second trench is placed disposed below a bottom surface of the first trench.

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