公开(公告)号：USRE46994E1

公开(公告)日：2018-08-14

申请号：US14940288

申请日：2015-11-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doo-gon Kim ,  Ki-tae Park ,  Yeong-taek Lee

IPC: G11C16/04 ,  G11C16/34

CPC classification number: G11C16/3418

Abstract: Flash memory devices are provided including a plurality of layers stacked vertically. Each of the plurality of layers include a plurality of memory cells. A row decoder is electrically coupled to the plurality of layers and configured to supply a wordline voltage to the plurality of layers. Memory cells provided in at least two layers of the plurality of layers belong to a same memory block and wordlines associated with the memory cells in the at least two layers of the plurality of layers are electrically coupled.