公开(公告)号：US08947935B2

公开(公告)日：2015-02-03

申请号：US13835780

申请日：2013-03-15

Applicant: SAMSUNG Electronics Co., Ltd.

Inventor： Eui-Seung Kim ,  Ji-Sung Kim

IPC: G11C11/34 ,  G11C7/12 ,  G11C16/24

CPC classification number: G11C7/12 ,  G11C11/5642 ,  G11C16/24 ,  G11C16/28

Abstract: An integrated includes a memory cell, a bit line connected to the memory cell, a boosting circuit to boost the bit line up to a boosting voltage during a pre-charge operation pre-charging the bit line, and a regulation circuit connected between the bit line and an output terminal and determines a logic level of the output terminal according to the voltage of the bit line.

Abstract translation: 集成包括存储器单元，连接到存储单元的位线，在预充电位线的预充电操作期间将位线升高到升压电压的升压电路，以及连接在位之间的调节电路 线路和输出端子，并根据位线的电压确定输出端子的逻辑电平。

公开(公告)号：US09001588B2

公开(公告)日：2015-04-07

申请号：US13715471

申请日：2012-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eui-Seung Kim ,  Ji-Sung Kim ,  SeEun O

IPC: G11C16/06 ,  G11C7/00 ,  G11C7/06 ,  G11C27/00 ,  G11C16/28 ,  G11C11/56

CPC classification number: G11C16/28 ,  G11C11/56

Abstract: A sense amplifier circuit of a nonvolatile semiconductor memory device is provided. The sense amplifier circuit includes a reference voltage generator, a sensing voltage generator and a comparator. The sensing voltage generator outputs a sensing voltage to a sensing node depending on a current flowing through a data line. A load transistor supplying a current to the data line is directly connected to a clamping node. The load transistor is included in a current mirror circuit. In a read operation, a low voltage drive operation is performed and a sensing speed and power consumption are properly controlled.

Abstract translation: 提供了一种非易失性半导体存储器件的读出放大器电路。 感测放大器电路包括参考电压发生器，感测电压发生器和比较器。 感测电压发生器根据流过数据线的电流将感测电压输出到感测节点。 向数据线提供电流的负载晶体管直接连接到钳位节点。 负载晶体管包括在电流镜电路中。 在读取操作中，执行低电压驱动操作并且适当地控制感测速度和功耗。