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公开(公告)号：US09001588B2
公开(公告)日：2015-04-07
申请号：US13715471
申请日：2012-12-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Eui-Seung Kim , Ji-Sung Kim , SeEun O
Abstract: A sense amplifier circuit of a nonvolatile semiconductor memory device is provided. The sense amplifier circuit includes a reference voltage generator, a sensing voltage generator and a comparator. The sensing voltage generator outputs a sensing voltage to a sensing node depending on a current flowing through a data line. A load transistor supplying a current to the data line is directly connected to a clamping node. The load transistor is included in a current mirror circuit. In a read operation, a low voltage drive operation is performed and a sensing speed and power consumption are properly controlled.
Abstract translation: 提供了一种非易失性半导体存储器件的读出放大器电路。 感测放大器电路包括参考电压发生器，感测电压发生器和比较器。 感测电压发生器根据流过数据线的电流将感测电压输出到感测节点。 向数据线提供电流的负载晶体管直接连接到钳位节点。 负载晶体管包括在电流镜电路中。 在读取操作中，执行低电压驱动操作并且适当地控制感测速度和功耗。
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公开(公告)号：US20130201761A1
公开(公告)日：2013-08-08
申请号：US13715471
申请日：2012-12-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eui-Seung KIM , Ji-Sung Kim , SeEun O
IPC: G11C16/28
Abstract: A sense amplifier circuit of a nonvolatile semiconductor memory device is provided. The sense amplifier circuit includes a reference voltage generator, a sensing voltage generator and a comparator. The sensing voltage generator outputs a sensing voltage to a sensing node depending on a current flowing through a data line. A load transistor supplying a current to the data line is directly connected to a clamping node. The load transistor is included in a current mirror circuit. In a read operation, a low voltage drive operation is performed and a sensing speed and power consumption are properly controlled.
Abstract translation: 提供了一种非易失性半导体存储器件的读出放大器电路。 感测放大器电路包括参考电压发生器，感测电压发生器和比较器。 感测电压发生器根据流过数据线的电流将感测电压输出到感测节点。 向数据线提供电流的负载晶体管直接连接到钳位节点。 负载晶体管包括在电流镜电路中。 在读取操作中，执行低电压驱动操作并且适当地控制感测速度和功耗。
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