公开(公告)号：US11889703B2

公开(公告)日：2024-01-30

申请号：US17975242

申请日：2022-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Kyung Kim ,  Eun Ji Lee ,  Ji Yean Kim ,  Tae Seong Kim ,  Jae Wook Joo

IPC: H10B61/00 ,  G11C11/16 ,  H10N50/10

CPC classification number: H10B61/20 ,  G11C11/1659 ,  G11C11/1673 ,  H10N50/10

Abstract: A magnetic junction memory device is provided. The magnetic junction memory device including a sensing circuit including a sensing node, the sensing node being connected to a first end of a transistor and configured to change a voltage of the sensing node in accordance with a resistance of a magnetic junction memory cell, a gating voltage generator circuit configured to generate a gating voltage of the transistor using a reference resistor and a reference voltage, and a read circuit configured to read data from the magnetic junction memory cell using the reference voltage and the voltage of the sensing node.

公开(公告)号：US11515357B2

公开(公告)日：2022-11-29

申请号：US16798615

申请日：2020-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Kyung Kim ,  Eun Ji Lee ,  Ji Yean Kim ,  Tae Seong Kim ,  Jae Wook Joo

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/08

Abstract: A magnetic junction memory device is provided. The magnetic junction memory device including a sensing circuit including a sensing node, the sensing node being connected to a first end of a transistor and configured to change a voltage of the sensing node in accordance with a resistance of a magnetic junction memory cell, a gating voltage generator circuit configured to generate a gating voltage of the transistor using a reference resistor and a reference voltage, and a read circuit configured to read data from the magnetic junction memory cell using the reference voltage and the voltage of the sensing node.