公开(公告)号：US11251229B2

公开(公告)日：2022-02-15

申请号：US16927240

申请日：2020-07-13

申请人： Samsung Electronics Co., Ltd.

发明人： Dong Chan Kim ,  Kwan Sik Kim ,  Bo Yun Kim ,  Eun Sung Seo ,  Il Young Yoon ,  Seung Hoon Choi

IPC分类号： H01L27/146 ,  H01L27/30 ,  H01L51/44 ,  H01L31/0232 ,  H01L31/0224

摘要： An image sensor includes a sensor region for receiving light and generating an image data and a pad region adjacent to the sensor region, an insulation layer on the substrate, and a lower transparent electrode on the insulation layer in the sensor region, and an etch stop layer on the insulation layer in the sensor region and pad region. The etch stop layer may include silicon nitride. A height of an uppermost surface of the lower transparent electrode may be substantially equal to a height of an upper surface of the etch stop layer, with respect to the substrate.

公开(公告)号：US10748968B2

公开(公告)日：2020-08-18

申请号：US16285510

申请日：2019-02-26

申请人： Samsung Electronics Co., Ltd.

发明人： Dong Chan Kim ,  Kwan Sik Kim ,  Bo Yun Kim ,  Eun Sung Seo ,  Il Young Yoon ,  Seung Hoon Choi

IPC分类号： H01L27/146 ,  H01L27/30 ,  H01L51/44 ,  H01L31/0232 ,  H01L31/0224

摘要： An image sensor includes a sensor region for receiving light and generating an image data and a pad region adjacent to the sensor region, an insulation layer on the substrate, and a lower transparent electrode on the insulation layer in the sensor region, and an etch stop layer on the insulation layer in the sensor region and pad region. The etch stop layer may include silicon nitride. A height of an uppermost surface of the lower transparent electrode may be substantially equal to a height of an upper surface of the etch stop layer, with respect to the substrate.

公开(公告)号：US20190371861A1

公开(公告)日：2019-12-05

申请号：US16285510

申请日：2019-02-26

申请人： Samsung Electronics Co., Ltd.

发明人： Dong Chan Kim ,  Kwan Sik Kim ,  Bo Yun Kim ,  Eun Sung Seo ,  II Young Yoon ,  Seung Hoon Choi

IPC分类号： H01L27/30 ,  H01L27/146 ,  H01L31/0224 ,  H01L31/0232 ,  H01L51/44

摘要： An image sensor includes a sensor region for receiving light and generating an image data and a pad region adjacent to the sensor region, an insulation layer on the substrate, and a lower transparent electrode on the insulation layer in the sensor region, and an etch stop layer on the insulation layer in the sensor region and pad region. The etch stop layer may include silicon nitride. A height of an uppermost surface of the lower transparent electrode may be substantially equal to a height of an upper surface of the etch stop layer, with respect to the substrate.