公开(公告)号：US20190371861A1

公开(公告)日：2019-12-05

申请号：US16285510

申请日：2019-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Chan Kim ,  Kwan Sik Kim ,  Bo Yun Kim ,  Eun Sung Seo ,  II Young Yoon ,  Seung Hoon Choi

IPC: H01L27/30 ,  H01L27/146 ,  H01L31/0224 ,  H01L31/0232 ,  H01L51/44

Abstract: An image sensor includes a sensor region for receiving light and generating an image data and a pad region adjacent to the sensor region, an insulation layer on the substrate, and a lower transparent electrode on the insulation layer in the sensor region, and an etch stop layer on the insulation layer in the sensor region and pad region. The etch stop layer may include silicon nitride. A height of an uppermost surface of the lower transparent electrode may be substantially equal to a height of an upper surface of the etch stop layer, with respect to the substrate.

公开(公告)号：US20230211456A1

公开(公告)日：2023-07-06

申请号：US18066510

申请日：2022-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yea Rin Byun ,  In Kwon Kim ,  Bo Yun Kim ,  Sang Kyun Kim ,  Bo Un Yoon ,  Hyo San Lee ,  Byung Keun Hwang

IPC: B24B37/24

CPC classification number: B24B37/24

Abstract: A polishing pad for chemical mechanical polishing includes a polymer matrix and a temperature sensitive agent dispersed in the polymer matrix and constituting 1 to 40% by volume of the polishing pad, wherein the temperature sensitive agent includes a two-dimensional (2D) sheet material having a thermal conductivity of 1 W/(m·K) or more.

公开(公告)号：US11251229B2

公开(公告)日：2022-02-15

申请号：US16927240

申请日：2020-07-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Chan Kim ,  Kwan Sik Kim ,  Bo Yun Kim ,  Eun Sung Seo ,  Il Young Yoon ,  Seung Hoon Choi

IPC: H01L27/146 ,  H01L27/30 ,  H01L51/44 ,  H01L31/0232 ,  H01L31/0224

Abstract: An image sensor includes a sensor region for receiving light and generating an image data and a pad region adjacent to the sensor region, an insulation layer on the substrate, and a lower transparent electrode on the insulation layer in the sensor region, and an etch stop layer on the insulation layer in the sensor region and pad region. The etch stop layer may include silicon nitride. A height of an uppermost surface of the lower transparent electrode may be substantially equal to a height of an upper surface of the etch stop layer, with respect to the substrate.

公开(公告)号：US10748968B2

公开(公告)日：2020-08-18

申请号：US16285510

申请日：2019-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Chan Kim ,  Kwan Sik Kim ,  Bo Yun Kim ,  Eun Sung Seo ,  Il Young Yoon ,  Seung Hoon Choi

IPC: H01L27/146 ,  H01L27/30 ,  H01L51/44 ,  H01L31/0232 ,  H01L31/0224

Abstract: An image sensor includes a sensor region for receiving light and generating an image data and a pad region adjacent to the sensor region, an insulation layer on the substrate, and a lower transparent electrode on the insulation layer in the sensor region, and an etch stop layer on the insulation layer in the sensor region and pad region. The etch stop layer may include silicon nitride. A height of an uppermost surface of the lower transparent electrode may be substantially equal to a height of an upper surface of the etch stop layer, with respect to the substrate.

公开(公告)号：US11279852B2

公开(公告)日：2022-03-22

申请号：US16912426

申请日：2020-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunsung Seo ,  Chang Gil Kwon ,  Sung Pyo Lee ,  Dongchan Kim ,  Bo Yun Kim ,  Jun Ha Hwang

IPC: C09G1/18 ,  H01L21/321 ,  C09G1/02 ,  H01L21/306 ,  B24B1/00 ,  H01L21/304 ,  C09G1/00

Abstract: Described herein are chemical mechanical polishing (CMP) slurry compositions, such as CMP slurry compositions for polishing an indium tin oxide (ITO) layer, along with methods of fabricating a semiconductor device using such a CMP slurry composition. The CMP slurry composition can include a polishing particle, a dispersing agent, an auxiliary oxidizing agent, and a sugar alcohol compound.

公开(公告)号：US11094586B2

公开(公告)日：2021-08-17

申请号：US16539064

申请日：2019-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Hoon Choi ,  Jaeung Koo ,  Kwansung Kim ,  Bo Yun Kim ,  Wandon Kim ,  Boun Yoon ,  Jeonghyuk Yim ,  Yeryung Jeon

IPC: H01L21/768 ,  H01L27/105 ,  H01L23/528 ,  H01L23/532 ,  H01L21/3105

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the semiconductor device including a semiconductor substrate including a first region and a second region; an interlayer insulating layer on the semiconductor substrate, the interlayer insulating layer including a first opening on the first region and having a first width; and a second opening on the second region and having a second width, the second width being greater than the first width; at least one first metal pattern filling the first opening; a second metal pattern in the second opening; and a filling pattern on the second metal pattern in the second opening, wherein the at least one first metal pattern and the second metal pattern each include a same first metal material, and the filling pattern is formed of a non-metal material.