公开(公告)号：US20240234000A1

公开(公告)日：2024-07-11

申请号：US18116836

申请日：2023-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro APALKOV ,  Roman CHEPULSKYY ,  Jaewoo JEONG ,  FNU IKHTIAR ,  Sungchul LEE

IPC: H01F10/32 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

CPC classification number: H01F10/3286 ,  G11C11/161 ,  H10B61/22 ,  H10N50/10 ,  H10N50/85

Abstract: A perpendicular shape anisotropy magnetic tunnel junction structure includes a reference layer, a non-magnetic layer, and a free layer. The reference layer includes a first side and a second side opposite the first side. The non-magnetic spacer includes a first side and a second side. The first side of the non-magnetic spacer is on the second side of the first reference layer. The free layer includes a first side and a second side. The first side of the free layer is on the second side of the non-magnetic spacer. The free layer includes a first layer on the first side of the free layer, a second layer on the second side of the free layer and a coupling layer disposed between the first layer and the second layer. A ratio of a saturation magnetization of the second layer to a saturation magnetization of the first layer ranges from 0.2-0.8 inclusive.

公开(公告)号：US20240237542A1

公开(公告)日：2024-07-11

申请号：US18116835

申请日：2023-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro APALKOV ,  Roman CHEPULSKYY ,  Jaewoo JEONG ,  FNU IKHTIAR ,  Sungchul LEE

IPC: H10N50/10 ,  G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/10 ,  G11C11/161 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/85

Abstract: A perpendicular shape anisotropy magnetic tunnel junction structure includes a reference layer, a non-magnetic layer, and a free layer. The reference layer includes a first side and a second side that is opposite the first side. The non-magnetic spacer includes a first side and a second side. The first side of the non-magnetic spacer is on the second side of the first reference layer. The free layer includes a first side and a second side. The first side of the free layer is on the second side of the non-magnetic spacer. The free layer further includes a first layer on the first side of the free layer, a second layer on the second side of the free layer and a coupling layer disposed between the first layer and the second layer. A saturation magnetization of the second layer is between 2-5 times inclusive a saturation magnetization of the first layer.

公开(公告)号：US20240237543A1

公开(公告)日：2024-07-11

申请号：US18116839

申请日：2023-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro APALKOV ,  Roman CHEPULSKYY ,  Jaewoo JEONG ,  FNU IKHTIAR ,  Sungchul LEE

IPC: H10N50/10 ,  G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/10 ,  G11C11/161 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/85

Abstract: A perpendicular shape anisotropy magnetic tunnel junction structure includes a reference layer, a non-magnetic layer, and a free layer. The reference layer includes a first side and a second side that is opposite the first side of the reference layer. The non-magnetic spacer includes a first side and a second side in which the first side of the non-magnetic spacer is on the second side of the first reference layer. The free layer includes a first side and a second side in which the first side of the free layer is on the second side of the non-magnetic spacer and in which the free layer further includes an exchange energy Aex having a range of 0.5 to 1.0 μerg/cm2.