公开(公告)号：US20240234000A1

公开(公告)日：2024-07-11

申请号：US18116836

申请日：2023-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro APALKOV ,  Roman CHEPULSKYY ,  Jaewoo JEONG ,  FNU IKHTIAR ,  Sungchul LEE

IPC: H01F10/32 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

CPC classification number: H01F10/3286 ,  G11C11/161 ,  H10B61/22 ,  H10N50/10 ,  H10N50/85

Abstract: A perpendicular shape anisotropy magnetic tunnel junction structure includes a reference layer, a non-magnetic layer, and a free layer. The reference layer includes a first side and a second side opposite the first side. The non-magnetic spacer includes a first side and a second side. The first side of the non-magnetic spacer is on the second side of the first reference layer. The free layer includes a first side and a second side. The first side of the free layer is on the second side of the non-magnetic spacer. The free layer includes a first layer on the first side of the free layer, a second layer on the second side of the free layer and a coupling layer disposed between the first layer and the second layer. A ratio of a saturation magnetization of the second layer to a saturation magnetization of the first layer ranges from 0.2-0.8 inclusive.

公开(公告)号：US20240237542A1

公开(公告)日：2024-07-11

申请号：US18116835

申请日：2023-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro APALKOV ,  Roman CHEPULSKYY ,  Jaewoo JEONG ,  FNU IKHTIAR ,  Sungchul LEE

IPC: H10N50/10 ,  G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/10 ,  G11C11/161 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/85

Abstract: A perpendicular shape anisotropy magnetic tunnel junction structure includes a reference layer, a non-magnetic layer, and a free layer. The reference layer includes a first side and a second side that is opposite the first side. The non-magnetic spacer includes a first side and a second side. The first side of the non-magnetic spacer is on the second side of the first reference layer. The free layer includes a first side and a second side. The first side of the free layer is on the second side of the non-magnetic spacer. The free layer further includes a first layer on the first side of the free layer, a second layer on the second side of the free layer and a coupling layer disposed between the first layer and the second layer. A saturation magnetization of the second layer is between 2-5 times inclusive a saturation magnetization of the first layer.

公开(公告)号：US20170141156A1

公开(公告)日：2017-05-18

申请号：US15080576

申请日：2016-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro APALKOV ,  Xueti TANG ,  Dustin ERICKSON ,  Vladimir NIKITIN ,  Roman CHEPULSKYY

IPC: H01L27/22 ,  H01L43/12 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08

Abstract: A magnetic tunnel junction device and a method to make the device are disclosed. The magnetic tunnel junction device comprises a first reference magnetic material layer, a tunnel barrier material layer, a free magnetic material layer between the first reference magnetic material layer and the tunnel barrier material layer, and a second reference magnetic material layer disposed on an opposite side of the tunnel barrier material layer from the free magnetic material layer, in which the second reference magnetic material layer is anti-magnetically exchanged coupled with the first reference magnetic material layer. A shift field Hshift experienced by the free magnetic material layer is substantially canceled by the anti-magnetic exchange coupling between the first reference magnetic material layer and the second reference magnetic material layer.

公开(公告)号：US20240237543A1

公开(公告)日：2024-07-11

申请号：US18116839

申请日：2023-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro APALKOV ,  Roman CHEPULSKYY ,  Jaewoo JEONG ,  FNU IKHTIAR ,  Sungchul LEE

IPC: H10N50/10 ,  G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/10 ,  G11C11/161 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/85

Abstract: A perpendicular shape anisotropy magnetic tunnel junction structure includes a reference layer, a non-magnetic layer, and a free layer. The reference layer includes a first side and a second side that is opposite the first side of the reference layer. The non-magnetic spacer includes a first side and a second side in which the first side of the non-magnetic spacer is on the second side of the first reference layer. The free layer includes a first side and a second side in which the first side of the free layer is on the second side of the non-magnetic spacer and in which the free layer further includes an exchange energy Aex having a range of 0.5 to 1.0 μerg/cm2.