公开(公告)号：US20150228722A1

公开(公告)日：2015-08-13

申请号：US14613070

申请日：2015-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-Ae CHUNG ,  Gab-Jin NAM ,  Sung-Min KIM ,  Sung-Kweon BAEK ,  Jin-Soak KIM

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/78

CPC classification number: H01L29/0657 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/7853

Abstract: Provided is a semiconductor device including: a substrate; a first fin-field effect transistor comprising a first fin-type semiconductor layer having a first height and a first width, formed on the substrate; and a second fin-field effect transistor comprising a second fin-type semiconductor layer having a second height and a second width, formed on the substrate. The first fin-field effect transistor and the second fin-field effect transistor are separated by a predetermined distance. The first height is greater than the second height and the first width is less than the second width.

Abstract translation: 提供一种半导体器件，包括：衬底; 第一鳍场效应晶体管，其包括形成在所述基板上的具有第一高度和第一宽度的第一鳍式半导体层; 以及第二鳍状场效应晶体管，其包括形成在所述基板上的具有第二高度和第二宽度的第二鳍状半导体层。 第一鳍场效应晶体管和第二鳍场效应晶体管被隔开预定距离。 第一高度大于第二高度，第一宽度小于第二宽度。