公开(公告)号：US20220068718A1

公开(公告)日：2022-03-03

申请号：US17523223

申请日：2021-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min KIM ,  Sunhom Steve PAAK ,  Heon-Jong SHIN ,  Dong-Ho CHA

IPC: H01L21/8234

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

公开(公告)号：US20200227321A1

公开(公告)日：2020-07-16

申请号：US16833885

申请日：2020-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min KIM ,  Sunhom Steve PAAK ,  Heon-Jong SHIN ,  Dong-Ho CHA

IPC: H01L21/8234

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

公开(公告)号：US20180226404A1

公开(公告)日：2018-08-09

申请号：US15944956

申请日：2018-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Gun YOU ,  Hyung-Jong LEE ,  Sung-Min KIM ,  Chong-Kwang CHANG

IPC: H01L27/088 ,  H01L23/528 ,  H01L23/532 ,  H01L29/06 ,  H01L23/485

CPC classification number: H01L27/0886 ,  H01L23/485 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/0649

Abstract: A semiconductor device, including first and second fin patterns separated by a first trench; a gate electrode intersecting the first and second fin patterns; and a contact on at least one side of the gate electrode, the contact contacting the first fin pattern, the contact having a bottom surface that does not contact the second fin pattern, a height from a bottom of the first trench to a topmost end of the first fin pattern in a region in which the contact intersects the first fin pattern being a first height, and a height from the bottom of the first trench to a topmost end of the second fin pattern in a region in which an extension line of the contact extending along a direction in which the gate electrode extends intersects the second fin pattern being a second height, the first height being smaller than the second height.

公开(公告)号：US20180190543A1

公开(公告)日：2018-07-05

申请号：US15903718

申请日：2018-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min KIM ,  Sunhom Steve PAAK ,  Heon-Jong SHIN ,  Dong-Ho CHA

IPC: H01L21/8234

CPC classification number: H01L21/823431 ,  H01L21/823481

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

公开(公告)号：US20190013401A1

公开(公告)日：2019-01-10

申请号：US16128152

申请日：2018-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min KIM ,  Kyung-Seok OH ,  Cheol KIM ,  Heon-Jong SHIN ,  Jong-Ryeol YOO ,  Hyun-Jung LEE ,  Seong-Hoon JEONG

IPC: H01L29/78 ,  H01L27/12 ,  H01L21/84 ,  H01L29/66

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.

公开(公告)号：US20150228722A1

公开(公告)日：2015-08-13

申请号：US14613070

申请日：2015-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-Ae CHUNG ,  Gab-Jin NAM ,  Sung-Min KIM ,  Sung-Kweon BAEK ,  Jin-Soak KIM

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/78

CPC classification number: H01L29/0657 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/7853

Abstract: Provided is a semiconductor device including: a substrate; a first fin-field effect transistor comprising a first fin-type semiconductor layer having a first height and a first width, formed on the substrate; and a second fin-field effect transistor comprising a second fin-type semiconductor layer having a second height and a second width, formed on the substrate. The first fin-field effect transistor and the second fin-field effect transistor are separated by a predetermined distance. The first height is greater than the second height and the first width is less than the second width.

Abstract translation: 提供一种半导体器件，包括：衬底; 第一鳍场效应晶体管，其包括形成在所述基板上的具有第一高度和第一宽度的第一鳍式半导体层; 以及第二鳍状场效应晶体管，其包括形成在所述基板上的具有第二高度和第二宽度的第二鳍状半导体层。 第一鳍场效应晶体管和第二鳍场效应晶体管被隔开预定距离。 第一高度大于第二高度，第一宽度小于第二宽度。

公开(公告)号：US20220301939A1

公开(公告)日：2022-09-22

申请号：US17830396

申请日：2022-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min KIM ,  Sunhom Steve PAAK ,  Heon-Jong SHIN ,  Dong-Ho CHA

IPC: H01L21/8234

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

公开(公告)号：US20210119036A1

公开(公告)日：2021-04-22

申请号：US17119507

申请日：2020-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Kwan YU ,  Sung-Min KIM ,  Dong-Suk SHIN ,  Seung-Hun LEE ,  Dong-Won KIM

IPC: H01L29/78 ,  H01L29/66 ,  H01L27/11 ,  H01L29/06 ,  H01L27/088 ,  H01L21/8234

Abstract: A semiconductor device may include a first active fin, a second active fin and a gate structure. The first active fin may extend in a first direction on a substrate and may include a first straight line extension portion, a second straight line extension portion, and a bent portion between the first and second straight line extension portions. The second active fin may extend in the first direction on the substrate. The gate structure may extend in a second direction perpendicular to the first direction on the substrate. The gate structure may cross one of the first and second straight line extension portions of the first active fin and may cross the second active fin.

公开(公告)号：US20200257333A1

公开(公告)日：2020-08-13

申请号：US16760670

申请日：2018-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Uk HAN ,  Sung-Min KIM

IPC: G06F1/16

Abstract: According to various embodiments of the present invention, a head mounting device (HMD) may comprise: a facial wearing part which is worn on a user's face and outputs an image to both of a user's eyes; a wearing band part mounted on an upper side of the facial wearing part; and a support part which is mounted on the wearing band part to support a user's head, wherein the facial wearing part may comprise a housing in which an optical device is disposed, a guide member which extends over a first surface of the housing and is formed corresponding to a contour of the user's face, and a fixing plate which is mounted on the housing with a part of the guide member interposed between the fixing plate and the housing so as to fix the guide member to the housing. The head mounting device as mentioned above can be various according to embodiments.

公开(公告)号：US20190081168A1

公开(公告)日：2019-03-14

申请号：US16045305

申请日：2018-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Kwan YU ,  Sung-Min KIM ,  Dong-Suk SHIN ,  Seung-Hun LEE ,  Dong-Won KIM

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L27/11

Abstract: A semiconductor device may include a first active fin, a second active fin and a gate structure. The first active fin may extend in a first direction on a substrate and may include a first straight line extension portion, a second straight line extension portion, and a bent portion between the first and second straight line extension portions. The second active fin may extend in the first direction on the substrate. The gate structure may extend in a second direction perpendicular to the first direction on the substrate. The gate structure may cross one of the first and second straight line extension portions of the first active fin and may cross the second active fin.