公开(公告)号：US09070881B2

公开(公告)日：2015-06-30

申请号：US14281380

申请日：2014-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Zhenan Bao ,  Gaurav Giri ,  Sang-yoon Lee ,  Stefan Mannsfeld

IPC: H01L51/00 ,  H01L21/02

CPC classification number: H01L51/0014 ,  H01L21/02282 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/0012 ,  H01L51/0028

Abstract: A method of manufacturing an organic semiconductor thin film includes coating an organic semiconductor solution on a substrate, and shearing the organic semiconductor solution in a direction that results in a shearing stress being applied to the organic semiconductor solution to form the organic semiconductor thin film, wherein a speed of the shearing is controlled such that an intermolecular distance of the organic semiconductor solution is adjusted.

Abstract translation: 一种制造有机半导体薄膜的方法包括将有机半导体溶液涂覆在基板上，并将有机半导体溶液沿导致施加到有机半导体溶液上的剪切应力的方向剪切以形成有机半导体薄膜，其中 控制剪切速度使得调节有机半导体溶液的分子间距离。