公开(公告)号：US20250139000A1

公开(公告)日：2025-05-01

申请号：US18768411

申请日：2024-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungjeong Jo ,  Geontaek Lee ,  In-Su Kim ,  Beomkyu Shin ,  Jaeyong Jeong

IPC: G06F12/02 ,  G06F13/16

Abstract: A storage device configured to perform address mapping in a multi-domain manner includes a non-volatile memory device including a plurality of dies associated with a first domain or a second domain, and a storage controller configured to map a logical address of a write request to a first physical address mapped to the first domain. Responsive to detecting concentration of a workload or resource corresponding to the write request in the first domain at a reference rate or more, the storage controller is configured to redirect the first physical address mapped to the first domain to a second physical address assigned to the second domain.