公开(公告)号：US20240135925A1

公开(公告)日：2024-04-25

申请号：US18377636

申请日：2023-10-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gilho Lee ,  Gajin Song ,  Hoseon Shin ,  Jungin Lee ,  Seokyeong Jeong

IPC: G10L15/22 ,  G06F40/279 ,  G10L15/26

CPC classification number: G10L15/22 ,  G06F40/279 ,  G10L15/26

Abstract: An electronic device according to an embodiment may include a microphone, a memory, and at least one processor(s). According to an embodiment, the at least one processor may be configured to acquire speech data corresponding to a user's speech via the microphone. The at least one processor according to an embodiment may be configured to acquire first text recognized on speech data by at least partially performing automatic speech recognition and/or natural language understanding. The at least one processor according to an embodiment may be configured to identify, based on the first text, second text stored in the memory. The at least one processor according to an embodiment may be configured to control to output the first text or the second text as a speech recognition result of the speech data, based on a difference between the first text and the second text. The at least one processor according to an embodiment may be configured to acquire training data for recognition of the user's speech, based on relevance between the first text and the second text with respect to the speech data.

公开(公告)号：US12213387B2

公开(公告)日：2025-01-28

申请号：US17386187

申请日：2021-07-27

Applicant: Samsung Electronics Co., Ltd. ,  POSTECH Research and Business Development Foundation

Inventor： Won Joon Cho ,  Sungdug Kim ,  Inseob Shin ,  Gilho Lee ,  Seong Jang

IPC: H10N52/80 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00

Abstract: The present disclosure provides a spin-orbit torque structure having a high spin Hall angle and low resistance by including a topological material. In addition, the present disclosure provides a spin-orbit torque structure having a low power consumption density by including a topological material. Also, a magnetic memory device including the spin-orbit torque structure is provided.

公开(公告)号：US11193970B2

公开(公告)日：2021-12-07

申请号：US16561741

申请日：2019-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seon-Mi Lee ,  Sung Jin Kim ,  Ja-Hwan Ku ,  Jae-Hyun Kim ,  Gilho Lee ,  Dahm Yu ,  Jonghyun Lim

IPC: G01R31/26

Abstract: Disclosed are a test chamber and a test apparatus having the same. The test chamber includes a test compartment configured to support a plurality of test boards, each being configured to secure a test object. The test chamber applies a test signal to the test object. The test chamber includes an inlet side and a discharge side, and a supply duct vertically extending along a height of the test compartment. The supply duct supplies the inlet side of the test compartment with the test fluid. The test chamber includes a fluid controller to uniformly control a distribution of a test fluid in the supply duct and uniformly supply the test compartment with the test fluid. The disclosed test chamber and test apparatus provide a uniform test temperature and thereby improve a test reliability of a test object such as a semiconductor or semiconductor package.