公开(公告)号：US20220292669A1

公开(公告)日：2022-09-15

申请号：US17495863

申请日：2021-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooyong Cho ,  Gun Huh

IPC: G06T7/00 ,  G03F7/20 ,  G06N3/08 ,  G06N3/04 ,  G06K9/62

Abstract: The inventive concepts provide a method of providing a stochastic prediction system. The method includes extracting contours of patterns corresponding to a first design layout from a plurality of scanning electron microscope (SEM) images, respectively, generating a first contour histogram image based on the contours, and training a stochastic prediction model by using the first contour histogram image as an output, and by using the first design layout and a first resist image, a first aerial image, a first slope map, a first density map, and/or a first photo map corresponding to the first design layout as inputs, in which the stochastic prediction model comprises a cycle generative adversarial network (GAN).

公开(公告)号：US11989873B2

公开(公告)日：2024-05-21

申请号：US17495863

申请日：2021-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooyong Cho ,  Gun Huh

IPC: G06T7/00 ,  G03F7/00 ,  G06F18/2415 ,  G06N3/047 ,  G06N3/088

CPC classification number: G06T7/0006 ,  G03F7/7065 ,  G06F18/2415 ,  G06N3/047 ,  G06N3/088 ,  G06T2207/10061 ,  G06T2207/20081 ,  G06T2207/20084 ,  G06T2207/30148

Abstract: The inventive concepts provide a method of providing a stochastic prediction system. The method includes extracting contours of patterns corresponding to a first design layout from a plurality of scanning electron microscope (SEM) images, respectively, generating a first contour histogram image based on the contours, and training a stochastic prediction model by using the first contour histogram image as an output, and by using the first design layout and a first resist image, a first aerial image, a first slope map, a first density map, and/or a first photo map corresponding to the first design layout as inputs, in which the stochastic prediction model comprises a cycle generative adversarial network (GAN).

公开(公告)号：US08762901B2

公开(公告)日：2014-06-24

申请号：US13626370

申请日：2012-09-25

Applicant: Samsung Electronics Co., Ltd

Inventor： WonChan Lee ,  Seong-Bo Shim ,  Sunghoon Jang ,  Gun Huh

IPC: G06F17/50

CPC classification number: G03F1/36

Abstract: A method for process proximity correction may include obtaining a point spread function (PSF) from test patterns, the test patterns including an etching process performed thereon, generating a target layout with polygonal patterns, dividing the target layout into grid cells, generating a density map including long-range layout densities, each of the long-range layout densities being obtained from the polygonal patterns located within a corresponding one of the grid cells, performing a convolution of the long-range layout densities with the PSF to obtain long-range etch skews for the grid cells, and generating an etch bias model including short-range etch skews and the long-range etch skews, each of the short-range etch skews being obtained from a neighboring region of a target pattern selected from the polygonal patterns in each of the grid cells.

Abstract translation: 用于过程接近校正的方法可以包括从测试图案获得点扩散函数（PSF），测试图案包括在其上执行的蚀刻处理，生成具有多边形图案的目标布局，将目标布局划分成网格单元，生成密度图 包括长距离布局密度，每个长距离布局密度都是从位于相应的一个网格单元内的多边形图案获得的，执行长距离布局密度与PSF的卷积以获得长距离蚀刻 并且产生包括短距离蚀刻偏斜和远距离蚀刻偏斜的蚀刻偏置模型，每个短距离蚀刻偏斜是从选自多边形图案中的目标图案的相邻区域获得的 每个网格单元格。