公开(公告)号：US20230176470A1

公开(公告)日：2023-06-08

申请号：US17860139

申请日：2022-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooyong Cho ,  Useong Kim ,  Heejun Lee

IPC: G03F1/36 ,  G06F30/398 ,  G03F7/20

CPC classification number: G03F1/36 ,  G06F30/398 ,  G03F7/70441

Abstract: Disclosed is a method of generating a curvilinear sub-resolution assist feature (SRAF) capable of easily generating a curvilinear SRAF satisfying mask rule check (MRC) conditions, an MRC verification method for easy MRC verification of the curvilinear SRAF, and a mask manufacturing method including the method of generating the same. The method of generating a curvilinear SRAF includes generating a curve axis for generating the curvilinear SRAF corresponding to a main feature, generating curve points on a line of the curve axis, and generating the curvilinear SRAF based on the curve points.

公开(公告)号：US11989873B2

公开(公告)日：2024-05-21

申请号：US17495863

申请日：2021-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooyong Cho ,  Gun Huh

IPC: G06T7/00 ,  G03F7/00 ,  G06F18/2415 ,  G06N3/047 ,  G06N3/088

CPC classification number: G06T7/0006 ,  G03F7/7065 ,  G06F18/2415 ,  G06N3/047 ,  G06N3/088 ,  G06T2207/10061 ,  G06T2207/20081 ,  G06T2207/20084 ,  G06T2207/30148

Abstract: The inventive concepts provide a method of providing a stochastic prediction system. The method includes extracting contours of patterns corresponding to a first design layout from a plurality of scanning electron microscope (SEM) images, respectively, generating a first contour histogram image based on the contours, and training a stochastic prediction model by using the first contour histogram image as an output, and by using the first design layout and a first resist image, a first aerial image, a first slope map, a first density map, and/or a first photo map corresponding to the first design layout as inputs, in which the stochastic prediction model comprises a cycle generative adversarial network (GAN).

公开(公告)号：US20220292669A1

公开(公告)日：2022-09-15

申请号：US17495863

申请日：2021-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooyong Cho ,  Gun Huh

IPC: G06T7/00 ,  G03F7/20 ,  G06N3/08 ,  G06N3/04 ,  G06K9/62

Abstract: The inventive concepts provide a method of providing a stochastic prediction system. The method includes extracting contours of patterns corresponding to a first design layout from a plurality of scanning electron microscope (SEM) images, respectively, generating a first contour histogram image based on the contours, and training a stochastic prediction model by using the first contour histogram image as an output, and by using the first design layout and a first resist image, a first aerial image, a first slope map, a first density map, and/or a first photo map corresponding to the first design layout as inputs, in which the stochastic prediction model comprises a cycle generative adversarial network (GAN).

公开(公告)号：US20240280891A1

公开(公告)日：2024-08-22

申请号：US18111785

申请日：2023-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heejun Lee ,  Wooyong Cho ,  Bayram Yenikaya ,  Joobyoung Kim ,  Useong Kim

IPC: G03F1/36 ,  G03F1/84

CPC classification number: G03F1/36 ,  G03F1/84

Abstract: Provided are an optical proximity correction (OPC) method capable of addressing the limitations of patterning and improving the reliability of patterning, and a mask manufacturing method using the OPC method. In the OPC method, a rectangular mask layout for a target pattern is created, the edge of the rectangular mask layout is dissected into segments, a first shape variable point is created, and a second shape variable point is created by shifting the first shape variable point on a rounded target pattern. Thereafter, a curvilinear mask layout is created based on the second shape variable point, a contour is extracted based on the curvilinear mask layout, an edge placement error (EPE) is determined, and the operations are repeated according to a predetermined criterion, thereby realizing a mask layout with minimal EPEs.