公开(公告)号：US20190027224A1

公开(公告)日：2019-01-24

申请号：US15860891

申请日：2018-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyo-Soo CHOO ,  Ji-Hyun PARK ,  Chi-Weon YOON ,  Moo-Sung KIM

IPC: G11C16/30 ,  G11C16/04 ,  G11C16/08 ,  G05F3/26 ,  G11C16/26

Abstract: A voltage generator of a nonvolatile memory device includes a charging circuit, a current mirror circuit, a discharging circuit and an output circuit. The charging circuit amplifies a difference between a reference voltage and a feedback voltage to generate a first current. The current mirror circuit is connected to the charging circuit and generates a second current based on the first current. The discharging circuit is connected to the current mirror circuit to draw the second current, and discharges the output voltage to a target level by adjusting discharging amount of the second current based on a sensing voltage which reflects a change of the feedback voltage. The output circuit is connected to the current mirror circuit, and provides the output voltage based on the first current and the second current to a first word-line connected to an output node.