公开(公告)号：US20240387597A1

公开(公告)日：2024-11-21

申请号：US18390713

申请日：2023-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwideok Ryan LEE ,  Jeongsoon KANG ,  Gyunha PARK ,  Jongeun PARK ,  Dongseok CHO

IPC: H01L27/146 ,  H04N25/63

Abstract: An image sensor includes a first structure and a second structure, each having at least one pixel and sequentially stacked in a vertical direction. Each of the pixels may include a photodiode portion, provided in the first structure, and a pixel circuit portion connected to the photodiode portion provided in the first structure.

公开(公告)号：US20240250104A1

公开(公告)日：2024-07-25

申请号：US18416388

申请日：2024-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyunha PARK ,  Jeongsoon KANG ,  Jongeun PARK ,  Gwideok Ryan LEE ,  Dongseok CHO

IPC: H01L27/146 ,  H01L23/00 ,  H04N25/79

CPC classification number: H01L27/14634 ,  H01L24/08 ,  H01L24/80 ,  H01L27/1469 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H04N25/79

Abstract: Provided is an image sensor including a first structure and a second structure stacked in a vertical direction, wherein the first structure includes a first pixel region, a photoelectric conversion unit in the first pixel region, a floating diffusion region in the first pixel region, a first interlayer insulating layer on the floating diffusion region, and a first pixel pad electrically connected to the floating diffusion region, and the second structure includes a second pixel region, a source-follower transistor in the second pixel region, a second interlayer insulating layer on the source-follower transistor, and a second pixel pad electrically connected to a gate of the source-follower transistor, and the image sensor includes a coupling prevention line arranged around the first and second pixel pads and electrically connected to the source region of the source-follower transistor.

公开(公告)号：US20250072142A1

公开(公告)日：2025-02-27

申请号：US18677417

申请日：2024-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyunha PARK ,  JONGHYUN GO ,  JI-YOUN SONG ,  KEUN YEONG CHO

IPC: H01L27/146

Abstract: An image sensor may include: a pixel array in which a plurality of pixels are arranged in a matrix, including a first pixel and a second pixel disposed adjacent to each other, each of the plurality of pixels includes: at least one photoelectric conversion device; at least one floating diffusion region to which charges of the at least one photoelectric conversion device are configured to be transferred; a reset transistor configured to transfer a voltage at a reset node to the at least one floating diffusion region; a source follower transistor having one end connected to a pixel voltage node and configured to output a sampling voltage corresponding to charges of the at least one floating diffusion region; and a select transistor having one end connected to the source follower transistor and configured to output the sampling voltage to an output node.